1. Vadim Fedorovich Masterov, a scientist and a teacher

   • V. K. Ivanov
   • B. P. Popov

   Dedicated to the Memory of V. F. Masterov Pages: 1199 - 1201

2. International symposium on photoluminescence and electroluminescence of rare-earth elements in semiconductors and insulators

   • E. I. Terukov

   Dedicated to the Memory of V. F. Masterov Pages: 1202 - 1203

3. V. F. Masterov’s school and fullerene research at the department of experimental physics, St. Petersburg State Technical University

   • A. V. Prikhodko
   • O. I. Konkov

   Dedicated to the Memory of V. F. Masterov Pages: 1204 - 1208

4. A model for the formation of donor centers in silicon layers implanted with erbium and oxygen ions

   • O. V. Aleksandrov
   • A. O. Zakhar’in

   Dedicated to the Memory of V. F. Masterov Pages: 1209 - 1214

5. Emission from rare-earth centers in (ZnTe:Yb):O/GaAs

   • V. M. Konnov
   • N. N. Loiko
   • E. I. Makhov

   Dedicated to the Memory of V. F. Masterov Pages: 1215 - 1220

6. Temperature dependences of photoluminescence spectra of single-crystal Ca₂GeO₄:Cr⁴⁺ films

   • O. N. Gorshkov
   • E. S. Demidov
   • A. N. Shushunov

   Dedicated to the Memory of V. F. Masterov Pages: 1221 - 1224

7. Effect of surface state density on room temperature photoluminescence from Si-SiO₂ structures in the range of band-to-band recombination in silicon

   • A. M. Emel’yanov
   • N. A. Sobolev
   • S. Pizzini

   Dedicated to the Memory of V. F. Masterov Pages: 1225 - 1226

8. Buried nanoscale damaged layers formed in Si and SiC crystals as a result of high-dose proton implantation

   • V. A. Kozlov
   • V. V. Kozlovskii
   • A. K. Kryzhanovskii

   Dedicated to the Memory of V. F. Masterov Pages: 1227 - 1234

9. The formation of β-FeSi₂ precipitates in microcrystalline Si

   • E. I. Terukov
   • O. I. Kon’kov
   • G. N. Mosina

   Dedicated to the Memory of V.F. Masterov Pages: 1235 - 1239

10. Erbium electroluminescence in p-i-n amorphous hydrogenated silicon structures

    • E. I. Terukov
    • O. B. Gusev
    • J. P. Kleider

    Dedicated to the Memory of V. F. Masterov Pages: 1240 - 1243

11. Photoluminescence and excitation features of Nd³⁺ ions in (La_0.97Nd_0.03)₂S₃ · 2Ga₂O₃ glasses

    • A. A. Babaev
    • E. M. Zobov
    • A. Kh. Sharapudinova

    Dedicated to the Memory of V. F. Masterov Pages: 1244 - 1247

12. Conductivity and structure of Er-doped amorphous hydrogenated silicon films

    • O. I. Kon’kov
    • E. I. Terukov
    • L. S. Granitsina

    Dedicated to the Memory of V. F. Masterov Pages: 1248 - 1251

13. Nature of impurity centers of rare-earth metals and self-organization processes in a-Si:H films

    • M. M. Mezdrogina
    • I. N. Trapeznikova
    • P. P. Seregin

    Dedicated to the Memory of V. F. Masterov Pages: 1252 - 1259

14. The influence of sinks of intrinsic point defects on phosphorus diffusion in Si

    • O. V. Aleksandrov

    Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 1260 - 1266

15. Possibility of observing Bose-Einstein condensation in semiconductors via Mössbauer spectroscopy using the ⁶⁷Zn isotope

    • S. A. Nemov
    • N. P. Seregin
    • S. M. Irkaev

    Electronic and Optical Properties of Semiconductors Pages: 1267 - 1269

16. Radiation hardness of wide-gap semiconductors (using the example of silicon carbide)

    • A. A. Lebedev
    • V. V. Kozlovski
    • R. Yakimova

    Electronic and Optical Properties of Semiconductors Pages: 1270 - 1275

17. Kinetic theory of negative magnetoresistance as an alternative to weak localization in semiconductors

    • V. É. Kaminskii

    Electronic and Optical Properties of Semiconductors Pages: 1276 - 1282

18. The influence of adsorbate on the work function and penetrability of the surface potential barrier of GaAs(110) single crystal

    • Yu. I. Asalkhanov
    • V. N. Abarykov

    Semiconductor Structures, Interfaces, and Surfaces Pages: 1283 - 1287

19. ZnMnSe/ZnSSe Type-II semimagnetic superlattices: Growth and magnetoluminescence properties

    • A. A. Toropov
    • A. V. Lebedev
    • B. Monemar

    Low-Dimensional Systems Pages: 1288 - 1293

20. Ordering of nanostructures in a Si/Ge_0.3Si_0.7/Ge system during molecular beam epitaxy

    • G. E. Cirlin
    • V. A. Egorov
    • P. Werner

    Low-Dimensional Systems Pages: 1294 - 1298

21. Effect of fullerene on the photogeneration and transport of charge carriers in triphenylamine-containing polyimides

    • E. L. Aleksandrova

    Amorphous, Vitreous, and Porous Semiconductors Pages: 1299 - 1302

22. Flattening of dynamic dielectric phase grating and single-mode lasing under the conditions of transverse oscillations of luminous flux

    • A. P. Astakhova
    • T. N. Danilova
    • Yu. P. Yakovlev

    Physics of Semiconductor Devices Pages: 1303 - 1307

23. High power single-mode (λ=1.3–1.6 μm) laser diodes based on quantum well InGaAsP/InP heterostructures

    • A. Yu. Leshko
    • A. V. Lyutetskii
    • I. S. Tarasov

    Physics of Semiconductor Devices Pages: 1308 - 1314

24. High efficiency (η_D>80%) long wavelength (λ>1.25 μm) quantum dot diode lasers on GaAs substrates

    • S. S. Mikhrin
    • A. E. Zhukov
    • Zh. I. Alferov

    Physics of Semiconductor Devices Pages: 1315 - 1321