Modification of semiconductors with proton beams. A review V. V. KozlovskiiV. A. KozlovV. N. Lomasov Review Pages: 123 - 140
Electronic properties of variably charged defects in crystalline semiconductors A. N. KraichinskiiL. I. ShpinarI. I. Yaskovets Atomic Structure and Nonelectronic Properties of Semiconductors Pages: 141 - 145
Electrical properties of InP irradiated with fast neutrons in a nuclear reactor N. G. KolinD. I. MerkurisovS. P. Solov’ev Electronic and Optical Properties of Semiconductors Pages: 146 - 149
Electrical properties of transmutation-doped indium phosphide N. G. KolinD. I. MerkurisovS. P. Solov’ev Electronic and Optical Properties of Semiconductors Pages: 150 - 154
Thermal acceptors in irradiated silicon V. F. Stas’I. V. AntonovaL. S. Smirnov Electronic and Optical Properties of Semiconductors Pages: 155 - 160
Influence of Au and Pt on the concentration profile of Mn in Si G. S. KulikovSh. A. Yusupova Electronic and Optical Properties of Semiconductors Pages: 161 - 162
Variation in resistance of a nitrogen-enriched silicon layer as a result of the long-range effect of ion implantation E. S. DemidovV. V. KarzanovK. A. Markov Electronic and Optical Properties of Semiconductors Pages: 163 - 165
Contribution of the electron subsystem of crystal into reactions between multicharge centers in semiconductors N. I. BoyarkinaA. V. Vasil’ev Electronic and Optical Properties of Semiconductors Pages: 166 - 170
Control of the excitation conditions and the parameters of self-sustained oscillations of current in compensated silicon doped with manganese M. K. BakhadyrkhanovKh. AzimkhuzhaevÉ. Arzikulov Electronic and Optical Properties of Semiconductors Pages: 171 - 173
Reconstruction transition (4×2) → (2×4) on the (001) surfaces of InAs and GaAs Yu. G. GalitsynS. P. MoshchenkoA. S. Suranov Semiconductors Structures, Interfaces, and Surfaces Pages: 174 - 180
Physicochemical properties of the surface and near-surface region of epitaxial n-GaAs layers modified by atomic hydrogen N. A. TorkhovS. V. Eremeev Semiconductors Structures, Interfaces, and Surfaces Pages: 181 - 188
Magnetotransport in a semimetal channel in p-Ga1−x InxAsySb1−y /p-InAs heterostructures with various compositions of the solid solution T. I. VoroninaT. S. LagunovaYu. P. Yakovlev Semiconductors Structures, Interfaces, and Surfaces Pages: 189 - 194
Thermal annealing of defects in InGaAs/GaAs heterostructures with three-dimensional islands M. M. SobolevI. V. KochnevD. A. Bedarev Low-Dimensional Systems Pages: 195 - 204
On the constriction of the Hall current in the Corbino disk under quantum Hall effect conditions V. B. ShikinYu. V. Shikina Low-Dimensional Systems Pages: 205 - 212
The effect of ultrafast low-temperature doping of vitreous As-Se films with copper, silver, gold, and chromium (The Khan effect) M. A. Korzhuev Amorphous, Vitreous, and Porous Semiconductors Pages: 213 - 216
Scanning tunneling microscopy of films of amorphous carbon doped with copper A. O. GolubokO. M. GorbenkoV. I. Ivanov-Omskii Amorphous, Vitreous, and Porous Semiconductors Pages: 217 - 220
Mechanisms of transport and injection of carriers into a porous silicon: Electroluminescence in electrolytes D. N. GoryachevG. PolisskiiO. M. Sreseli Amorphous, Vitreous, and Porous Semiconductors Pages: 221 - 227
Quantum-mechanical features of the field effect in heterotransistors with modulation-and δ-doped regions V. A. Gergel’V. G. MokerovM. V. Timofeev Physics of Semiconductor Devices Pages: 228 - 232
Ultraquasi-hydrodynamic electron transport in submicrometer field effect MIS transistors and heterotransistors V. A. Gergel’V. G. MokerovYu. V. Fedorov Physics of Semiconductor Devices Pages: 233 - 236
Single-mode InAsSb/InAsSbP laser (λ≈3.2 μm) Tunable over 100 Å A. P. DanilovaA. N. ImenkovYu. P. Yakovlev Physics of Semiconductor Devices Pages: 237 - 242
6H-SiC epilayers as nuclear particle detectors A. A. LebedevN. S. SavkinaD. V. Davydov Physics of Semiconductor Devices Pages: 243 - 249
