1. Effect of impurities with variable valency on the transport phenomena in a quantum well

   • I. I. Lyapilin

   OriginalPaper Pages: 651 - 654

2. Charge-carrier lifetime in Hg_1−x Cd_xTe (x=0.22) structures grown by molecular-beam epitaxy

   • A. V. Voitsekhovskii
   • Yu. A. Denisov
   • Yu. G. Sidorov

   OriginalPaper Pages: 655 - 657

3. Frenkel’-Poole effect for boron impurity in silicon in strong warming electric fields

   • A. M. Kozlov
   • V. V. Ryl’kov

   OriginalPaper Pages: 658 - 660

4. Measurement of the diffusion length of minority charge carriers using real Schottky barriers

   • N. L. Dmitruk
   • O. Yu. Borkovskaya
   • S. V. Mamykin

   OriginalPaper Pages: 661 - 665

5. Effect of successive implantation of Ag⁺(Cu⁺) and Xe⁺ ions on the recombination properties of Cd_xHg_1−x Te crystals

   • M. I. Ibragimova
   • N. S. Baryshev
   • I. B. Khaibullin

   OriginalPaper Pages: 666 - 668

6. Characteristic features of Raman scattering of light in silicon doped with high krypton doses

   • M. F. Galyautdinov
   • N. V. Kurbatova
   • E. I. Shtyrkov

   OriginalPaper Pages: 669 - 671

7. Simulation of heat and mass transfer during growth of silicon carbide single crystals

   • B. A. Kirillov
   • A. S. Bakin
   • S. N. Solnyshkin

   OriginalPaper Pages: 672 - 676

8. Polarization photosensitivity of silicon solar cells with an antireflection coating consisting of a mixture of indium and tin oxides

   • V. M. Botnaryuk
   • A. V. Koval’
   • Yu. V. Rud’

   OriginalPaper Pages: 677 - 680

9. Photosensitivity of thin-film ZnO/CdS/Cu(In, Ga)Se₂ solar cells

   • T. Walter
   • V. Yu. Rud’
   • H. W. Schock

   OriginalPaper Pages: 681 - 685

10. High-temperature annealing and nuclear-transmutation doping of GaAs bombarded by reactor neutrons

    • V. N. Brudnyi
    • V. A. Novikov
    • A. I. Noifekh

    OriginalPaper Pages: 686 - 690

11. Characteristic structural features of amorphous hydrated silicon films deposited by direct-currect decomposition of silane in a magnetic field

    • O. A. Golikova
    • A. N. Kuznetsov
    • M. M. Kazanin

    OriginalPaper Pages: 691 - 694

12. Effect of laser irradiation on the photoconductivity and noise in n-Cd_x Hg_1−x Te single crystals

    • A. I. Vlasenko
    • V. A. Gnatyuk
    • P. E. Mozol’

    OriginalPaper Pages: 695 - 697

13. Photoelasticity and quadratic permittivity of wide-gap semiconductors

    • S. Yu. Davydov
    • S. K. Tikhonov

    OriginalPaper Pages: 698 - 699

14. Role of spatial localization of a particle during tunneling

    • N. L. Chuprikov

    OriginalPaper Pages: 700 - 703

15. Variation of the optical properties of porous silicon as a result of thermal annealing in vacuum

    • V. A. Kiselev
    • S. V. Polisadin
    • A. V. Postnikov

    OriginalPaper Pages: 704 - 706

16. Electron-hole scattering in p-type silicon with a low charge-carrier injection level

    • T. T. Mnatsakanov
    • L. I. Pomortseva
    • V. B. Shuman

    OriginalPaper Pages: 707 - 709

17. Effect of tin impurity on the photoconductivity kinetics of thin amorphous layers of arsenic selenide

    • M. S. Iovu
    • E. P. Kolomeiko
    • S. D. Shutov

    OriginalPaper Pages: 710 - 713

18. Study of submicron deposits in polycrystalline materials using the internal-friction method

    • Yu. N. Andreev
    • N. P. Yaroslavtsev
    • Yu. M. Tairov

    OriginalPaper Pages: 714 - 715

19. Mechanism of electroluminescence of porous silicon in electrolytes

    • D. N. Goryachev
    • O. M. Sreseli
    • L. V. Belyakov

    OriginalPaper Pages: 716 - 718

20. Excitonic effects in the photoconductivity of quantum-well Ga_xIn_1−x As/InP structures

    • M. F. Panov
    • A. N. Pikhtin

    OriginalPaper Pages: 719 - 721

21. Lateral association of vertically coupled quantum dots

    • A. F. Tsatsul’nikov
    • A. Yu. Egorov
    • P. S. Kop’ev

    OriginalPaper Pages: 722 - 725

22. Characteristic features of silicon multijunction solar cells with vertical p-n junctions

    • E. G. Guk
    • T. A. Nalet
    • V. B. Shuman

    OriginalPaper Pages: 726 - 727

23. 1/f noise in strongly doped n-type GaAs under band-band illumination conditions

    • N. V. D’yakonova
    • M. E. Levinshtein
    • F. Pascal

    OriginalPaper Pages: 728 - 732

24. Longitudinal photoeffect in In_0.53Ga_0.47As p-n junctions

    • S. V. Slobodchikov
    • Kh. M. Salikhov
    • E. V. Russu

    OriginalPaper Pages: 733 - 734

25. Deep centers and negative temperature coefficient of the breakdown voltage of SiC p-n structures

    • A. A. Lebedev
    • S. Ortoland
    • J. P. Chante

    OriginalPaper Pages: 735 - 737

26. Photoluminescence of erbium in amorphous hydrogenated phosphorus-doped silicon

    • E. I. Terukov
    • A. N. Kuznetsov
    • H. Kuehne

    OriginalPaper Pages: 738 - 739

27. Photovoltaic effect in an asymmetric GaAs/AlGaAs nanostructure produced as a result of laser excitation

    • I. V. Kucherenko
    • L. K. Vodop’yanov
    • V. I. Kadushkin

    OriginalPaper Pages: 740 - 742

28. A study of the excitonic characteristics in heterostructures with quantum wells and corrugated surface

    • I. A. Avrutskii
    • V. G. Litovchenko

    OriginalPaper Pages: 743 - 746

29. Faraday rotation of light in a microcavity

    • M. A. Kaliteevskii
    • A. V. Kavokin
    • P. S. Kop’ev

    OriginalPaper Pages: 747 - 751

30. Effect of radiation on the characteristics of MIS structures containing rare-earth oxides

    • Ya. G. Fedorenko
    • L. A. Otavina
    • A. M. Sverdlova

    OriginalPaper Pages: 752 - 755

31. Calculation of a hierarchical PbS-C superlattice in a multiwell model

    • E. Ya. Glushko
    • V. N. Evteev

    OriginalPaper Pages: 756 - 758

32. Viktor Il’ich Fistul’ (On his seventieth birthday)

    Personalia Pages: 759 - 760

33. Electronic phenomena in chalcogenide glassy semiconductors

    • K. D. Tséndin

    Review Pages: 761 - 761