1. Diffusion of boron and phosphorus in silicon during high-temperature ion implantation

   • G. V. Gadiyak

   OriginalPaper Pages: 321 - 325

2. Effect of electron and neutron bombardment on the orange luminescence spectra of not specially doped and copper-doped cadmium sulfide single crystals

   • G. E. Davidyuk
   • V. S. Manzhara
   • V. V. Bulatetskii

   OriginalPaper Pages: 326 - 328

3. Effect of lateral transport of photoinduced charge carriers in a heterostructure with a two-dimensional electron gas

   • V. A. Sablikov
   • O. A. Ryabushkin
   • S. V. Polyakov

   OriginalPaper Pages: 329 - 334

4. The electrical conductivity of polycrystalline SnO₂(Cu) films and their sensitivity to hydrogen sulfide

   • B. A. Akimov
   • A. V. Albul
   • M. Labeau

   OriginalPaper Pages: 335 - 339

5. Characteristic features of the accumulation of vacancy-and interstitial-type radiation defects in dislocation-free silicon with different oxygen contents

   • I. I. Kolkovskii
   • V. V. Luk’yanitsa

   OriginalPaper Pages: 340 - 343

6. Solid solution In_xGa_1−x As_ySb_zP_1−y−z : A new material for infrared optoelectronics. I. Thermodynamic analysis of the conditions for obtaining solid solutions, isoperiodic to InAs and GaSb substrates, by liquid-phase epitaxy

   • N. A. Charykov
   • A. M. Litvak
   • Yu. P. Yakovlev

   OriginalPaper Pages: 344 - 349

7. Interband magnetooptic absorption line shape in bismuth

   • S. V. Brovko
   • A. A. Zaitsev
   • O. V. Kondakov

   OriginalPaper Pages: 350 - 353

8. Intense photoluminescence of porous layers of SiC films grown on silicon substrates

   • A. M. Danishevskii
   • V. B. Shuman
   • A. Yu. Rogachev

   OriginalPaper Pages: 354 - 358

9. Injection enhancement of photocurrent in polycrystalline silicon p ⁺-n-n ⁺ structures

   • R. Aliev

   OriginalPaper Pages: 359 - 360

10. Particle scattering times on one-dimensional potential barriers

    • N. L. Chuprikov

    OriginalPaper Pages: 361 - 365

11. Transverse stability of an impact-ionization front in a Si p ⁺-n-n ⁺ structure

    • A. M. Minarskii
    • P. B. Rodin

    OriginalPaper Pages: 366 - 370

12. Deep level transient spectroscopy under conditions of current-carrier exchange between two allowed bands

    • A. A. Lebedev

    OriginalPaper Pages: 371 - 374

13. Effect of inhomogeneities of Bi₂T₃ crystals on the transverse Nernst-Ettingshausen effect

    • M. K. Zhitinskaya
    • S. A. Nemov
    • T. E. Svechnikova

    OriginalPaper Pages: 375 - 377

14. Investigation of carrier transport in a system of undoped quantum wells under pulsed excitation

    • A. M. Georgievskii
    • V. A. Solov’ev
    • A. Ya. Shik

    OriginalPaper Pages: 378 - 383

15. Electron localization in sound absorption oscillations in the quantum Hall effect regime

    • I. L. Drichko
    • A. M. D’yakonov
    • A. V. Suslov

    OriginalPaper Pages: 384 - 390

16. Spin relaxation and weak localization of two-dimensional electrons in asymmetric quantum Wells

    • A. M. Kreshchuk
    • S. V. Novikov
    • I. G. Savel’ev

    OriginalPaper Pages: 391 - 398

17. Hall effect on inertial electrons in semiconductors

    • V. I. Kadushkin

    OriginalPaper Pages: 399 - 400

18. Modeling of mass transfer under conditions of local gas-phase epitaxy through a mask

    • L. B. Proékt
    • M. A. Kaliteevskii
    • B. S. Yavich

    OriginalPaper Pages: 401 - 404

19. Photoconductivity of the germanium-doped solid solution p-GaAs_0.94Sb_0.06

    • T. Yu. Allen
    • T. A. Polyanskaya
    • A. A. Shakmaev

    OriginalPaper Pages: 405 - 406

20. Propagation of a surface acoustic wave in a layered system containing a two-dimensional conducting layer

    • V. D. Kagan

    OriginalPaper Pages: 407 - 410

21. Injection heterolaser based on an array of vertically aligned InGaAs quantum dots in a AlGaAs matrix

    • A. E. Zhukov
    • A. Yu. Egorov
    • D. Bimberg

    OriginalPaper Pages: 411 - 414

22. Neutron-activation analysis of the impurity composition of gallium arsenide based semiconductor structures

    • A. G. Dutov
    • V. A. Komar
    • L. A. Smakhtin

    OriginalPaper Pages: 415 - 417

23. Effect of laser radiation on the electronic density of states of an 〈insulator gallium arsenide〉 interface

    • L. N. Vozmilova
    • V. I. Gaman
    • T. P. Smirnova

    OriginalPaper Pages: 418 - 422

24. Radiative cooling under the conditions of magnetoconcentration

    • A. I. Liptuga
    • V. K. Malyutenko
    • L. V. Levash

    OriginalPaper Pages: 423 - 426

25. Effect of ultrasonic treatment on deformation effects and the structure of local centers in the substrate and in the contact regions of M/n−n ⁺-GaAs structures (M=Pt, Cr, W)

    • I. B. Ermolovich
    • V. V. Milenin
    • V. L. Gromashevskii

    OriginalPaper Pages: 427 - 430

26. Transitory switching-on of microplasmas at subthreshold voltages

    • V. N. Dobrovol’skii
    • I. E. Pal’tsev
    • A. V. Romanov

    OriginalPaper Pages: 431 - 432