1. Laser schlieren measurement of vibrational relaxation times for N₂O in mixtures containing CO, N₂, and Ar behind a shock wave

   • A. P. Zuev
   • S. S. Negodyaev
   • B. K. Tkachenko

   Optics and Spectroscopy Pages: 911 - 914

2. Vavilov-Cherenkov emission spectrum in an excited isotropic dispersing medium

   • B. A. Veklenko

   Optics and Spectroscopy Pages: 915 - 917

3. Transition radiation in the presence of excited media

   • B. A. Veklenko

   Optics and Spectroscopy Pages: 918 - 920

4. Comparison of ionization potentials of unexcited atoms and ions calculated by different methods

   • G. P. Fedina
   • A. V. Fedin

   Optics and Spectroscopy Pages: 921 - 924

5. Accurate relations for the isotopically invariant spectroscopic parameters of diatomic molecules

   • T. I. Velichko
   • Vl. G. Tyuterev

   Optics and Spectroscopy Pages: 925 - 928

6. Interaction of generators with hard excitation and the turbulence problem

   • P. S. Landa
   • S. M. Perminov

   Optics and Spectroscopy Pages: 928 - 931

7. Field drift of local centers as the cause of instability in the dark conductivity in CdS films grown in an atmosphere containing oxygen

   • S. A. Korepanov
   • P. A. Viktor
   • V. V. Serdyuk

   Physics of Semiconductors and Dielectrics Pages: 932 - 934

8. Modeling the electrical transfer in a mixture of disperse dielectric and finely disperse solid- or liquid-phase conductor

   • T. G. Mikhailova
   • L. A. Bel'kova
   • E. A. Zamotrinskaya

   Physics of Semiconductors and Dielectrics Pages: 935 - 940

9. Deflection of IR-radiation in n-InSb in the presence of temperature-electrical instability in a magnetic field

   • V. V. Antonov
   • V. V. Gusakov
   • L. I. Kats

   Physics of Semiconductors and Dielectrics Pages: 940 - 945

10. Screening of the electric field in covalent crystals containing point defects

    • N. A. Poklonskii

    Physics of Semiconductors and Dielectrics Pages: 945 - 947

11. Controlling the growth of variable zone heterostructures of GaAs-Al_xGa_1−xAs in a temperature-gradient field

    • V. N. Gaponenko
    • L. S. Lunin
    • O. D. Lunina

    Physics of Semiconductors and Dielectrics Pages: 948 - 950

12. Comparison of the results of theoretical analysis and experimental investigation of dynamic volt-ampere characteristics

    • M. É. Borisova
    • O. V. Galyukov
    • V. P. Rymsha

    Physics of Semiconductors and Dielectrics Pages: 951 - 957

13. Generalization of the Hutson and White theory to the case of piezosemiconductors with mixed conductivity

    • B. V. Shchepetil'nikov
    • A. G. Smagin
    • G. A. Ermakov

    Physics of Semiconductors and Dielectrics Pages: 958 - 961

14. High-frequency conductivity of a dielectric diode with cylindrical electrodes in the case of double injection in the drift-velocity saturation regime

    • B. L. Timan
    • V. M. Fesenko
    • G. M. Gulevich

    Physics of Semiconductors and Dielectrics Pages: 961 - 964

15. Low-frequency noises of planar Schottky diodes at high current densities

    • N. N. Armencha
    • I. A. Vasil'ev
    • A. V. Khalak

    Physics of Semiconductors and Dielectrics Pages: 964 - 967

16. Characteristic diffusion constants of cadmium in silicon

    • A. A. Arifov
    • D. Rakhimbaev

    Physics of Semiconductors and Dielectrics Pages: 967 - 970

17. Effect of growth conditions on the structure of GaAs layers in the OM-hydride process

    • T. A. Zeveke
    • T. S. Babushkina
    • T. M. Zotova

    Physics of Semiconductors and Dielectrics Pages: 971 - 973

18. Growing silicon epitaxial layers from a Si-Ga melt by the moving solvent method

    • V. N. Lozovskii
    • V. P. Kryzhanovskii
    • A. I. Kolesnichenko

    Physics of Semiconductors and Dielectrics Pages: 974 - 976

19. Binary correlation function of a random field in a spatially inhomogeneous semiconductor

    • V. D. Iskra

    Physics of Semiconductors and Dielectrics Pages: 977 - 980

20. Interband optical absorption in a heteropolar semiconductor with microcrystalline structure

    • V. D. Iskra

    Physics of Semiconductors and Dielectrics Pages: 981 - 984

21. Formation of p-n junctions in tellurium-doped Al_xGa_1−xSb(As) (x = 0.15–0.20) solid solution layers

    • A. P. Vyatkin
    • V. P. Germogenov
    • L. S. Khludkova

    Physics of Semiconductors and Dielectrics Pages: 985 - 988

22. Stochastic self-excited oscillations in semiconductors with shallow donors under avalanche breakdown conditions

    • I. N. Voronin

    Physics of Semiconductors and Dielectrics Pages: 988 - 991

23. Exciton mechanism of the formation of an N-section on the volt-ampere characteristic of GaSe 〈Cu〉

    • B. G. Tagiev
    • G. M. Mamedov
    • M. B. Dzhafarov

    Physics of Semiconductors and Dielectrics Pages: 991 - 994

24. Use of variational inequalities in electrostatics

    • V. P. Kazantsev

    Physics of Semiconductors and Dielectrics Pages: 995 - 999

25. Charge-ordered state of a half-filled conduction layer in a magnetic field

    • N. R. Moskal'
    • V. D. Didukh
    • D. N. Moskal'

    Physics of Magnetic Effects Pages: 1000 - 1003