Kinetics and Mechanisms of Reactive-Ion Etching of Si and SiO2 in a Plasma of a Mixture of HBr + O2 A. M. EfremovV. B. BetelinK.-H. Kwon OriginalPaper 27 January 2021 Pages: 379 - 384
Technology of Nanosized Metal Layers for Forming a Reliable Contact to the Drain Area of Silicon Transistors T. A. IsmailovA. R. ShakhmaevaB. A. Shangereeva OriginalPaper 27 January 2021 Pages: 385 - 388
Thermal Atomic Layer Deposition of TiNx Using TiCl4 and N2H4 A. I. AbdulagatovM. Kh. RabadanovI. M. Abdulagatov OriginalPaper 27 January 2021 Pages: 389 - 403
Microwave Characteristics of Amplifiers on Nanoheterostructures of Gallium Nitride in the 80–100 GHz Frequency Range D. L. GnatyukR. R. GalievYu. V. Fedorov OriginalPaper 27 January 2021 Pages: 404 - 410
Injection Diffusion-Drift Pulse Former D. S. GaevS. Sh. Rekhviashvili OriginalPaper 27 January 2021 Pages: 411 - 415
Amorphization of Vanadium Oxides during the Reversible Insertion of Lithium A. M. SkundinA. A. MironenkoO. E. Kuznetsov OriginalPaper 27 January 2021 Pages: 416 - 422
Effect of Point Defects on the Electromigration Rate at the Interface of Joined Materials T. M. MakhviladzeM. E. Sarychev OriginalPaper 27 January 2021 Pages: 423 - 430
Spots Concept for Problems of Artificial Intelligence and Algorithms of Neuromorphic Systems N. A. Simonov OriginalPaper 27 January 2021 Pages: 431 - 444
Simulation of a Normally-off HEMT Transistor Based on a GaN/AlGaN with a p-Gate V. I. EgorkinV. E. ZemlyakovO. B. Kukhtyaeva OriginalPaper 27 January 2021 Pages: 445 - 451
Modeling of the Crystallization and Correlation of the Properties with the Composition and Particle Size in Two-Dimensional GaSxSe1 – x (0 ≤ х ≤ 1) S. M. AsadovS. N. MustafaevaV. F. Lukichev OriginalPaper 27 January 2021 Pages: 452 - 465