1. Effect of the Composition on the Dielectric Properties and Charge Transfer in 2D GaS_{1 –х}Se_х Materials

   • S. M. Asadov
   • S. N. Mustafaeva
   • D. T. Guseinov

   OriginalPaper 19 July 2019 Pages: 203 - 207

   

2. Estimating the Interrelation between the Rate of Atomic Layer Deposition of Thin Platinum-Group Metal Films and the Molecular Mass of Reactant Precursors

   • V. Yu. Vasilyev

   OriginalPaper 19 July 2019 Pages: 208 - 219

   

3. Possibility of Controlling the Impurity Concentration in the Near-Surface Layers of Films Grown by the ALD Method

   • A. V. Fadeev
   • K. V. Rudenko

   OriginalPaper 19 July 2019 Pages: 220 - 228

   

4. Atomic Layer Deposition of Silicon Nitride Films on Gallium Arsenide Using a Glow Discharge

   • Yu. K. Ezhovskii
   • S. V. Mikhailovskii

   OriginalPaper 19 July 2019 Pages: 229 - 235

   

5. The Effect of an N₂ Additive on the GaAs Etching Rate in CF₂Cl₂ Plasma

   • S. A. Pivovarenok

   OriginalPaper 19 July 2019 Pages: 236 - 239

   

6. Synthesis of a Concurrent Error Detection Circuit Based on the Spectral R-Code with the Partitioning of Outputs into Groups

   • A. L. Stempkovskii
   • D. V. Tel’pukhov
   • S. I. Gurov

   OriginalPaper 19 July 2019 Pages: 240 - 249

   

7. Mechanisms of Initiation of Unstable Latchup Effects in CMOS ICs

   • A. I. Chumakov
   • D. V. Bobrovsky
   • I. I. Shvetsov-Shilovskiy

   OriginalPaper 19 July 2019 Pages: 250 - 254

   

8. Memristor Based Pulse Train Generator

   • V. V. Rakitin
   • S. G. Rusakov

   OriginalPaper 19 July 2019 Pages: 255 - 261

   

9. Microconsuming 8–12 GHz GaN Power Amplifiers

   • S. A. Gamkrelidze
   • D. L. Gnatyuk
   • Yu. V. Fedorov

   OriginalPaper 19 July 2019 Pages: 262 - 267

   

10. Inter-Device Radiation-Induced Leakages in the Bulk 180-nm CMOS Technology

    • A. B. Boruzdina
    • Yu. M. Gerasimov
    • I. I. Shvetsov-Shilovskii

    OriginalPaper 19 July 2019 Pages: 268 - 272