1. Single-event-effect sensetivity characterization of LSI circuits with a laser-based and a pulsed gamma-ray testing facilities used in combination

   • A. I. Chumakov
   • A. L. Vasil’ev
   • A. V. Yanenko

   OriginalPaper 12 July 2012 Pages: 221 - 225

2. An estimate of the FPGA sensitivity to effects of single nuclear particles

   • D. V. Bobrovskii
   • O. A. Kalashnikov
   • P. V. Nekrasov

   OriginalPaper 12 July 2012 Pages: 226 - 230

3. Simulation of the local effect of nuclear particles on 65-nm CMOS DICE memory cells

   • V. Ya. Stenin
   • P. V. Stepanov

   OriginalPaper 12 July 2012 Pages: 231 - 238

4. Simulation of the local effect of nuclear particles on 65-nm CMOS elements of two-phase logics

   • Yu. V. Katunin
   • V. Ya. Stenin

   OriginalPaper 12 July 2012 Pages: 239 - 250

5. An analysis of the radiation behavior of pulse voltage stabilizers

   • L. N. Kessarinskiy
   • D. V. Boychenko
   • A. Y. Nikiforov

   OriginalPaper 12 July 2012 Pages: 251 - 258

6. Radiation-induced degradation in the dynamic parameters of memory chips

   • A. B. Boruzdina
   • A. V. Ulanova
   • A. Yu. Nikiforov

   OriginalPaper 12 July 2012 Pages: 259 - 265

7. Investigation of the possibility to develop radiation-hardness LSIs for navigational purposes according to the 0.35-μm domestic CMOS SOI technology

   • V. V. Elesin
   • G. N. Nazarova
   • A. A. Titarenko

   OriginalPaper 12 July 2012 Pages: 266 - 277

8. Electron transport in thin-base transistor structures exposed to high-energy photons

   • A. S. Puzanov
   • S. V. Obolensky

   OriginalPaper 12 July 2012 Pages: 278 - 284