1. NV-centers in diamond. Part II. Spectroscopy, spin-state identification, and quantum manipulation

   • A. V. Tsukanov

   OriginalPaper 04 May 2012 Pages: 145 - 161

2. Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate

   • V. S. Arykov
   • A. M. Gavrilova
   • Yu. V. Lilenko

   OriginalPaper 04 May 2012 Pages: 162 - 168

3. Silicon solar cells with Si-Ge microheterojunctions

   • B. A. Abdurakhmanov
   • Kh. M. Iliev
   • A. R. Toshev

   OriginalPaper 04 May 2012 Pages: 169 - 171

4. Current-voltage characteristic and the spectrum width of electrons tunneling through W-WO₂-(Au ₁₄₇ ⁻ )-Al₂O₃-Al and Nd-Nd₂O₃-(Au ₅₅ ⁻ )-Nd₂O₃-Nd nanosandwiches. Part II: Construction and analysis of 1D models for 3D nanosandwiches

   • V. A. Zhukov
   • V. G. Maslov

   OriginalPaper 04 May 2012 Pages: 172 - 180

5. Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs

   • E. V. Erofeev
   • V. A. Kagadei

   OriginalPaper 04 May 2012 Pages: 181 - 188

6. Production of Ti, La, Pb, Cd, Mn, Zr, and Y oxide thin films on complex surfaces of etched aluminum foils for electrolytic capacitors by the pyrolysis method of salts of organic acids

   • A. A. Myatiev
   • I. S. Krechetov
   • P. A. Petrenko

   OriginalPaper 04 May 2012 Pages: 189 - 195

7. Nonempirical simulation of chemical deposition of silicon nitride films in CVD reactors

   • T. M. Makhviladze
   • A. Kh. Minushev
   • M. E. Sarychev

   OriginalPaper 04 May 2012 Pages: 196 - 205

8. Semiclassical simulation of the diffraction of a material wave from two Coulomb centers

   • K. S. Arakelov

   OriginalPaper 04 May 2012 Pages: 206 - 212

9. Optimization of the design flow of the system on a K64-RIO crystal manufactured using the 0.18 μm technology

   • A. O. Vlasov
   • B. E. Evlampiev
   • A. A. Kochnov

   OriginalPaper 04 May 2012 Pages: 213 - 219