NV-centers in diamond. Part II. Spectroscopy, spin-state identification, and quantum manipulation A. V. Tsukanov OriginalPaper 04 May 2012 Pages: 145 - 161
Formation of a submicron GaAs MESFET gate using a four-layer dielectric dummy gate V. S. ArykovA. M. GavrilovaYu. V. Lilenko OriginalPaper 04 May 2012 Pages: 162 - 168
Silicon solar cells with Si-Ge microheterojunctions B. A. AbdurakhmanovKh. M. IlievA. R. Toshev OriginalPaper 04 May 2012 Pages: 169 - 171
Current-voltage characteristic and the spectrum width of electrons tunneling through W-WO2-(Au 147 − )-Al2O3-Al and Nd-Nd2O3-(Au 55 − )-Nd2O3-Nd nanosandwiches. Part II: Construction and analysis of 1D models for 3D nanosandwiches V. A. ZhukovV. G. Maslov OriginalPaper 04 May 2012 Pages: 172 - 180
Features of the formation of a low-resistance Ge/Au/Ni/Ti/Au ohmic contact to n-i-GaAs E. V. ErofeevV. A. Kagadei OriginalPaper 04 May 2012 Pages: 181 - 188
Production of Ti, La, Pb, Cd, Mn, Zr, and Y oxide thin films on complex surfaces of etched aluminum foils for electrolytic capacitors by the pyrolysis method of salts of organic acids A. A. MyatievI. S. KrechetovP. A. Petrenko OriginalPaper 04 May 2012 Pages: 189 - 195
Nonempirical simulation of chemical deposition of silicon nitride films in CVD reactors T. M. MakhviladzeA. Kh. MinushevM. E. Sarychev OriginalPaper 04 May 2012 Pages: 196 - 205
Semiclassical simulation of the diffraction of a material wave from two Coulomb centers K. S. Arakelov OriginalPaper 04 May 2012 Pages: 206 - 212
Optimization of the design flow of the system on a K64-RIO crystal manufactured using the 0.18 μm technology A. O. VlasovB. E. EvlampievA. A. Kochnov OriginalPaper 04 May 2012 Pages: 213 - 219