Wide-bandgap compound semiconductors for X- or gamma-ray detectors V. M. ZaletinV. P. Varvaritsa Materials Science and Technology: Semiconductors 09 December 2011 Pages: 543 - 552
Internal-getter formation in nitrogen-doped dislocation-free silicon wafers M. V. MezhennyiM. G. Mil’vidskiiV. Ya. Reznik Materials Science and Technology: Semiconductors 09 December 2011 Pages: 553 - 558
Approaches to hydrogenation of silicon tetrachloride in polysilicon manufacture V. M. IvanovYu. V. Trubitsin Materials Science and Technology: Semiconductors 09 December 2011 Pages: 559 - 561
Optical transmission spectra and electrical properties of langasite and langatate crystals as dependent on growth conditions O. A. BuzanovN. S. KozlovaN. A. Siminel Materials Science and Technology: Dielectrics 09 December 2011 Pages: 562 - 566
Activated-process parameters for diamond, silicon, and germanium crystals M. N. Magomedov Materials Science and Technology: Dielectrics 09 December 2011 Pages: 567 - 573
Effect of the microstructure on the properties of radio-absorbing nickel-zinc ferrites V. G. KostishinR. M. VergazovA. T. Morchenko Materials Science and Technology: Magnetic Materials 09 December 2011 Pages: 574 - 577
Modeling and simulating the nucleation of amorphous or crystalline films of diamond-like materials B. M. Sinel’nikovV. A. Tarala Processes and Materials Simulation 09 December 2011 Pages: 578 - 586
Conditions for the formation of defectless quantum dots in the theoretical estimation of In x Ga1 − x As/GaAs heterostructures R. Kh. AkchurinN. T. Vagapova Nanomaterials and Nanotechnology 09 December 2011 Pages: 587 - 590
Surface structure of nanocomposites based on silicon-carbon matrix revealed by scanning probe microscopy M. D. MalinkovichYu. N. ParkhomenkoM. L. Shupegin Nanomaterials and Nanotechnology 09 December 2011 Pages: 591 - 594
Hydrogen sorption by carbon nanomaterials A. V. TimoninaD. N. BorisenkoS. K. Brantov Nanomaterials and Nanotechnology 09 December 2011 Pages: 595 - 601
How the edge permeability of a 2D island influences the transition from 2D to 3D growth S. N. FilimonovYu. Yu. Hervieu Nanomaterials and Nanotechnology 09 December 2011 Pages: 602 - 609
Pb1 − x Sn x Te epitaxial films for terahertz detectors A. I. BelogorokhovA. A. KonovalovYu. N. Parkhomenko Epitaxial Layers and Multilayer Compositions 09 December 2011 Pages: 610 - 611
Electric properties of (SiC)1 − x (AlN) x /SiC anisotropic heterostructures B. A. BilalovM. K. KurbanovSh. M. Ramazanov Epitaxial Layers and Multilayer Compositions 09 December 2011 Pages: 612 - 615
On the essence of the high photosensitivity of a-Si:H layered films I. A. KurovaN. N. Ormont Epitaxial Layers and Multilayer Compositions 09 December 2011 Pages: 616 - 619
Spectral and photoelectric parameters of high-voltage multi-junction solar batteries A. S. Korol’chenkoS. A. LegotinV. N. Murashev Epitaxial Layers and Multilayer Compositions 09 December 2011 Pages: 620 - 623
How the modes of operation of light-emitting diodes influence the process of the formation of defects in the area of a p-n junction and the quantum yield drop F. I. Manyakhin Epitaxial Layers and Multilayer Compositions 09 December 2011 Pages: 624 - 628
Structural and electric properties of AlN substrates used for LED Heterostructures’ growth A. Ya. PolyakovN. B. SmirnovYu. N. Makarov Physical Properties and Research Methods 09 December 2011 Pages: 629 - 633
Atomic structure and methods for structural investigations how ingot growth conditions of Bi2Te2.7Se0.3 solid solutions influence the physical properties of anisotropy V. T. BublikA. I. VoroninO. V. Toropova Atomic Structure and Methods for Structural Investigations 09 December 2011 Pages: 634 - 640
The effect of thermal-neutron radiation on the decomposition of an oxygen solid solution in silicon K. L. EnisherlovaV. T. BublikE. M. Temper Atomic Structure and Methods for Structural Investigations 09 December 2011 Pages: 641 - 648