Effect of surface roughness on the temperature of a silicon wafer heated by incoherent radiation V. I. RudakovV. V. OvcharovV. P. Prigara Technological Processes in Microand Nanoelectronics 21 January 2010 Pages: 1 - 11
A new technology for manufacturing the dielectric isolation of elements of microelectronic devices by oxidizing grooves in single-crystal silicon Yu. P. SnitovskiiM. G. Krasikov Technological Processes in Microand Nanoelectronics 21 January 2010 Pages: 12 - 18
Diagnosing reliability of integrated circuits using noises and the ESD effect M. I. GorlovD. Yu. SmirnovR. M. Tikhonov Technological Processes in Micro- and Nanoelectronics 21 January 2010 Pages: 19 - 25
Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology V. Yu. Vasilyev Thin Films 21 January 2010 Pages: 26 - 33
Determination of the diffusion length of charge minority carriers using digital oscillography of surface photovoltage V. N. Podshivalov Semiconductor Devices 21 January 2010 Pages: 34 - 41
Offset voltage of an integrated magnetotransistor sensor R. D. Tikhonov Semiconductor Devices 21 January 2010 Pages: 42 - 53
Low-voltage arithmetic units based on fully depleted SOI CMOS nanotransistors N. V. Masal’skii Circuit Analysis and Synthesis 21 January 2010 Pages: 54 - 62
Intersubband optical transitions in InAs/GaSb quantum wells I. A. SemenikhinaA. A. ZakharovaK. A. Chao Modeling and Simulation 21 January 2010 Pages: 63 - 72
