1. Introduction to the cycle of articles devoted to methods and means of evaluation and prediction of radiation stability of submicron articles of microelectronics

   OriginalPaper 08 January 2009 Pages: 1 - 1

2. Experimental studies of the adequacy of laser simulations of dose rate effects in integrated circuits and semiconductor devices

   • A. Yu. Nikiforov
   • P. K. Skorobogatov
   • V. S. Figurov

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 2 - 16

3. Calculation of surface recombination current in bipolar microelectronic structures subjected to ionizing radiation

   • V. S. Pershenkov
   • D. V. Savchenkov
   • A. S. Egorov

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 17 - 29

4. Functional-logical simulation of quality of functioning integrated circuits under the effect of radiation and electromagnetic field

   • V. M. Barbashov
   • N. S. Trushkin

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 30 - 42

5. Prospects for using submicron CMOS VLSI in fault-tolerant equipment operating under exposure to atmospheric neutrons

   • V. B. Betelin
   • S. V. Baranov
   • A. V. Yanenko

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 43 - 47

6. Operability analysis of submicron CMOS-based VLSI RAMs operated under extreme thermal conditions

   • A. A. Krasnyuk
   • V. Ya. Stenin
   • A. V. Yakovlev

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 48 - 57

7. Specific features of radiation-stimulated breakdown of a nonuniformly doped p-n junction

   • A. S. Puzanov
   • S. V. Obolensky

   Radiation-Effect Modeling and Analysis in Microelectronics Technologies 08 January 2009 Pages: 58 - 68