Foreword to the special issue on ionizing-radiation effects in microelectronics EditorialNotes 18 January 2011 Pages: 1 - 1
Evaluating the effect of photogeneration nonuniformity on the accuracy of laser simulation of the transient radiation response in semiconductor devices and circuits A. Y. NikiforovP. K. Skorobogatov Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 2 - 14
Evaluating the effect of temperature on the accuracy of laser simulation of the transient radiation response in semiconductor devices and circuits A. Y. NikiforovP. K. Skorobogatov Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 15 - 24
Simulating the response of SOS CMOS building blocks to pulsed ionizing irradiation A. V. KirgizovaP. K. SkorobogatovA. G. Petrov Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 25 - 40
Estimating IC susceptibility to single-event latchup A. I. ChumakovA. A. PechenkinA. V. Yanenko Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 41 - 46
Simulating single-event effects associated with high-energy neutrons for different VLSI technologies S. V. BaranovB. V. VaseleginA. V. Yanenko Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 47 - 54
Current-feedback operational amplifier: Some features of its transient radiation response T. M. Agakhanyan Radiation-Effect Modeling and Simulation 18 January 2011 Pages: 55 - 61
Method for online nondestructive hardness assurance for CMOS LSI circuits realized in SOS technology G. G. DavydovA. V. SogoyanI. B. Yashanin Hardness Assurance: Methods and Results 18 January 2011 Pages: 62 - 71