C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis A. G. ZhdanG. V. ChuchevaV. G. Naryshkina Process Technologies Pages: 139 - 147
Submicrometer josephson junction as a sensor of current states in a mesoscopic superconducting structure I. N. Zhilyaev Microelectronic Devices Pages: 148 - 152
Effect of doping on the temperature coefficient of resistance of polysilicon films A. A. KovalevskiiA. V. DolbikS. N. Voitekh Thin Films Pages: 153 - 158
Phosphomolybdic acid-assisted thermal oxidation of GaAs I. Ya. MittovaS. S. LavrushinaA. V. Popelo Thin Films Pages: 159 - 163
Polymer surface deformation under semicontact-mode AFM scanning A. B. PetrovR. R. Gallyamov Thin Films Pages: 164 - 170
Transformation of a Gaussian doping profile in a temperature field as influenced by the temperature dependence of the diffusion coefficient V. V. OvcharovV. I. Rudakov Diffusion in Silicon Pages: 171 - 178
Plasma etching of poly-Si/SiO2/Si structures: Langmuir-probe and optical-emission-spectroscopy monitoring K. V. RudenkoA. V. Myakon’kikhA. A. Orlikovsky Plasma Diagnostics Pages: 179 - 192
Simulating quantum dynamics in terms of classical collective behavior Y. I. Ozhigov Modeling and Simulation Pages: 193 - 202
Zn-P complex in Si: An ab-initio calculation of the structure and electron-spin properties A. I. AleksandrovS. N. DobryakovV. V. Privezentsev Quantum Computing Pages: 203 - 207
