High-dielectric-constant medium used to increase qubit spacing A. E. KlimovV. A. NadolinnyiV. N. Shumsky Quantum-Computing Devices Pages: 277 - 284
Modeling the ESR spectra of a Zn-P two-spin system in Si: The structure of the semiempirical relaxation operator incorporated in the quantum Liouville equation S. N. DobryakovV. V. Privezentsev Quantum-Computing Devices Pages: 285 - 290
New vistas for diamond as an electronic material V. Yu. KarasevV. D. KryukovB. A. Belov Process Technologies Pages: 291 - 297
Evaluation of focused O+ ion beams as a tool for making resist masks by reactive etching V. A. ZhukovA. I. TitovM. M. Nesterov Process Technologies Pages: 298 - 303
Effect of ionizing irradiation and thermal annealing on the entropy of the atomic system of a SiO2 film V. D. PopovG. A. Protopopov Process Technologies Pages: 304 - 309
Structure, shape, and orientation of an island adsorbed on a single-crystal surface in the case of lattice mismatch Yu. N. DevyatkoS. V. RogozhkinA. V. Fadeev Process Technologies Pages: 310 - 321
Structure of neutron-induced defect clusters in GaAs MESFETs E. V. KiselevaS. V. Obolenskii Radiation Effects on Advanced GaAs Devices Pages: 322 - 328
X-ray or UV adjustment of MOS threshold voltage: Analytical and numerical modeling M. N. LevinA. V. TatarintsevV. R. Gitlin Modeling and Simulation Pages: 329 - 336
Transistor-degradation prediction by time-series analysis M. I. GorlovA. V. StrogonovD. Yu. Smirnov Circuit Analysis and Synthesis Pages: 337 - 344