The 50th Anniversary of the Ministry of Defense's 22 TsNIII Research Institute: Its Contributions to the National Microelectronics V. A. Telets Personalia Pages: 269 - 271
Structural and Luminescent Properties of SiO x N y (Si) Nanocomposite Films V. G. BaruS. BaylissO. F. Shevchenko Nanostructure Characterization Pages: 272 - 278
Mossbauer-Spectroscopy Characterization of Nanostructured Magnetic Materials N. P. AksenovaM. A. Chuev Nanostructure Characterization Pages: 279 - 294
Sustaining Mechanisms of the ECR Heating of Electrons in Low-Pressure Microwave Plasmas under Magnetic Multipole Confinement A. B. Petrin Nanostructure Characterization Pages: 295 - 308
Tip-Shape Reconstruction for a Laterally Vibrating SPM Probe A. P. ChuklanovA. A. BukharaevP. A. Borodin Materials and Microstructure Characterization Pages: 309 - 315
Method for the Microwave Measurement of Carrier Lifetime in Lightly Doped Silicon Ingots P. A. BorodovskiiA. F. BuldyginE. V. Chernyavskii Materials and Microstructure Characterization Pages: 316 - 324
ESR Study of P-doped, Zn-compensated Si Single Crystals S. N. DobryakovB. V. KornilovV. V. Privezentsev Process Technologies Pages: 325 - 327
Engineering Approach to CMOS-Logic Optimization Allowing for Internal Capacitances and On-Chip Interconnections A. V. ButuzovG. V. Kristovskii Circuit Analysis and Synthesis Pages: 328 - 338