Fabrication of Strain-Relaxed Si1 − x Gex/Si(001) Buffer Layers of Low Surface Roughness N. V. VostokovYu. N. DrozdovM. V. Shaleev Process Technologies Pages: 203 - 209
Electron Cyclotron Resonance Used in Low-Pressure Microwave Plasma Reactors with Permanent Magnets A. B. Petrin Low-Temperature Plasma Processing Pages: 210 - 216
Evaluating the Wall-Recombination Constant of Cl Atoms in Cl2-Ar Plasmas of Different Ar Percentage Yu. V. KirillovD. V. Sitanov Low-Temperature Plasma Processing Pages: 217 - 221
Theory of the Vacuum Nanotriode, Part 2: The Possibility of Negative Transconductance V. A. Zhukov Micro- and Nanoelectronic Devices Pages: 222 - 228
GaAs Pixel-Detector Technology for X-ray Medical Imaging: A Review G. M. LezhnevaR. G. MelkadzeL. V. Khvedelidze Micro- and Nanoelectronic Devices Pages: 229 - 241
Si/Si1 − x Gex Superlattice Structure from X-ray-Scattering Data S. N. YakuninE. M. PashaevR. M. Imamov Materials and Microstructure Characterization Pages: 242 - 251
Stresses near the Edges of a Square Silicon Membrane V. A. GridchinV. V. GrichenkoA. V. Shaporin Microelectromechanical Systems Pages: 252 - 258
Phase-Amplitude Relationship of One-Port Temperature-Stable Circuits Based on an Ultrawideband Current-Limiting BJT Amplifier and Designed to Provide Negative Resistance V. G. Prokopenko Circuit Analysis and Synthesis Pages: 259 - 267