Mathematical Modeling of Ionizing-Radiation Effects in ICs: A Review T. M. Agakhanyan OriginalPaper Pages: 64 - 67
Physical Principles of Laser Simulation for the Transient Radiation Response of Semiconductor Structures, Active Circuit Elements, and Circuits: A Linear Model A. Y. NikiforovP. K. Skorobogatov OriginalPaper Pages: 68 - 79
Modeling of High-Dose-Rate Pulsed Radiation Effects in the Parasitic MOS Structures of CMOS LSI Circuits A. Y. NikiforovA. V. Sogoyan OriginalPaper Pages: 80 - 91
One-Parameter Model for the Estimation of IC Susceptibility to Proton-Induced Single-Event Upsets A. I. Chumakov OriginalPaper Pages: 92 - 98
Predicting the Failure Threshold of Dose Rate for ICs Exposed to Pulsed Ionizing Radiation of Arbitrary Pulse Shape A. I. ChumakovV. V. Gontar' OriginalPaper Pages: 99 - 105
Evaluation of Moderately Focused Laser Irradiation as a Method for Simulating Single-Event Effects A. I. ChumakovA. N. EgorovA. V. Yanenko OriginalPaper Pages: 106 - 110
Ionizing-Radiation Response of the GaAs/(Al, Ga)As PHEMT: A Comparison of Gamma- and X-ray Results D. V. GromovV. V. ElesinV. G. Mokerov OriginalPaper Pages: 111 - 115
Comparison between the Ion-Beam and the Laser Long-Range Gettering of GaAs MESFETs S. V. Obolenskii OriginalPaper Pages: 116 - 119
Effect of Radiation-Induced Defect Clusters on Current Flow through a Quasi-ballistic GaAs MESFET S. V. Obolenskii OriginalPaper Pages: 120 - 125