1. X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe

   • E. M. Pashaev
   • V. N. Peregudov
   • A. P. Korovin

   OriginalPaper Pages: 271 - 276

2. Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds

   • E. I. Cherepov
   • E. G. Tishkovskii
   • A. G. Sokol

   OriginalPaper Pages: 277 - 281

3. Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films

   • V. G. Erkov
   • S. F. Devyatova

   OriginalPaper Pages: 282 - 289

4. Isotropic Plasma Etching of SiO2 Films

   • A. A. Kovalevskii
   • V. S. Malyshev
   • V. M. Sorokin

   OriginalPaper Pages: 290 - 294

5. Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices

   • M. I. Gorlov
   • D. A. Litvinenko

   OriginalPaper Pages: 295 - 304

6. Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities

   • F. F. Komarov
   • A. F. Komarov
   • S. A. Petrov

   OriginalPaper Pages: 305 - 309

7. Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction

   • E. M. Pashaev
   • S. N. Yakunin
   • R. M. Imamov

   OriginalPaper Pages: 310 - 317

8. MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device

   • E. V. Chernyavskii
   • V. P. Popov
   • L. N. Safronov

   OriginalPaper Pages: 318 - 322

9. Trench-Gate MOS-Controlled Thyristor: An Evaluation

   • E. V. Chernyavskii
   • V. P. Popov
   • L. N. Safronov

   OriginalPaper Pages: 323 - 325

10. Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics

    • V. A. Goryachev

    OriginalPaper Pages: 326 - 334

11. Instability Conditions of the Stationary Nonconducting State for the Bispin

    • A. P. Lysenko

    OriginalPaper Pages: 335 - 339