X-ray-Induced Irreversible Changes in the Structure and Electrical Properties of Cd1 – xZnxTe E. M. PashaevV. N. PeregudovA. P. Korovin OriginalPaper Pages: 271 - 276
Diffusion of Nitrogen Atoms Implanted into Synthetic Diamonds E. I. CherepovE. G. TishkovskiiA. G. Sokol OriginalPaper Pages: 277 - 281
Polycrystalline-Silicon LPCVD by Propene-Assisted Silane Pyrolysis: A Study of the Process and the Films V. G. ErkovS. F. Devyatova OriginalPaper Pages: 282 - 289
Isotropic Plasma Etching of SiO2 Films A. A. KovalevskiiV. S. MalyshevV. M. Sorokin OriginalPaper Pages: 290 - 294
Annealing of Radiation and Electrostatic-Discharge Damages in Semiconductor Devices M. I. GorlovD. A. Litvinenko OriginalPaper Pages: 295 - 304
Si3N4 SOI Structures Produced by Nitrogen Ion Implantation at High Energies and Beam Current Densities F. F. KomarovA. F. KomarovS. A. Petrov OriginalPaper Pages: 305 - 309
Characterization of Selectively Doped InAs-Quantum-Dot GaAs-Based Multilayer Heterostructures by High-Resolution X-ray Diffraction E. M. PashaevS. N. YakuninR. M. Imamov OriginalPaper Pages: 310 - 317
MOS-Controlled Thyristor: A Study of a Promising Power-Switching Device E. V. ChernyavskiiV. P. PopovL. N. Safronov OriginalPaper Pages: 318 - 322
Trench-Gate MOS-Controlled Thyristor: An Evaluation E. V. ChernyavskiiV. P. PopovL. N. Safronov OriginalPaper Pages: 323 - 325
Effect of Discontinuities on ULSI On-Chip Interconnection Characteristics V. A. Goryachev OriginalPaper Pages: 326 - 334
Instability Conditions of the Stationary Nonconducting State for the Bispin A. P. Lysenko OriginalPaper Pages: 335 - 339