Linear Standard for SEM–AFM Microelectronics Dimensional Metrology in the Range 0.01–100 μm Ch. P. VolkE. S. GornevA. V. Rakov OriginalPaper Pages: 207 - 223
ULSI Gap Filling with a Thin CVD SiO2-Based Insulator: A Review V. Y. Vassiliev OriginalPaper Pages: 224 - 231
DeleCut: Producing High-Quality SOI Structures by Hydrogen Ion Implantation V. P. PopovI. V. AntonovaI. V. Mironova OriginalPaper Pages: 232 - 237
Photoresists Used as Mask Materials in Ion Implantation for the CMOS Technology: Optimizing Mask Thickness S. V. Gran'koF. F. KomarovA. V. Leont'ev OriginalPaper Pages: 238 - 242
Open Microwave Resonator Used for the Characterization of a Helicon-Source Plasma Yu. P. BaryshevI. N. MoskalevA. O. Prokof'ev OriginalPaper Pages: 243 - 247
Lateral Injection Utilized for Improving the Performance of Microwave Bipolar Transistors Yu. P. Snitovskii OriginalPaper Pages: 248 - 253
Carrier Trapping and Scattering in Ge-Doped SiO2 D. I. BrinkevichV. S. ProsolovichYu. N. Yankovskii OriginalPaper Pages: 254 - 256
Polarity-Dependent Electrical Mass Transfer in Silicon: The Location and Shape of the Metal-like Bridge B. A. Panfilov OriginalPaper Pages: 257 - 259
Structural and Behavioral Irreproducibility of Solid Materials: A New Insight into the Problem N. V. BodyaginS. P. VikhrovI. V. Tarasov OriginalPaper Pages: 260 - 264
Effect of Gamma Irradiation on the Surface Morphology of SOS Films A. N. KiselevG. A. MaksimovD. O. Filatov OriginalPaper Pages: 265 - 269