Two-Dimensional Epitaxial Nucleation with Large Critical-Nucleus Size I. G. NeizvestnyN. L. ShvartsZ. Sh. Yanovitskaya OriginalPaper Pages: 70 - 78
Thermal Oxidation of InP Promoted by the Formation of N2O I. Ya. MittovaS. S. LavrushinaV. M. Kashkarov OriginalPaper Pages: 79 - 83
Solid-Phase Reactions in the Thermal Oxidation of Ni/GaAs Heterostructures I. Ya. MittovaE. V. TominaA. O. Vasyukevich OriginalPaper Pages: 84 - 87
Porous-Silicon Formation in HF–HNO3–H2O Etchants E. A. StarostinaV. V. StarkovA. F. Vyatkin OriginalPaper Pages: 88 - 96
Evolution of Dopant Concentration from a Gaussian Profile in a Nonuniform Temperature Field V. I. RudakovV. V. Ovcharov OriginalPaper Pages: 97 - 102
Wet Etching of Ion-Implanted Silicon Dioxide Monitored by Atomic-Force Microscopy A. A. BukharaevN. I. NurgazizovA. V. Sugonyako OriginalPaper Pages: 103 - 109
Ellipsometric Characterization of the Transition Layer in SiC/AlN Structures V. V. LuchininM. F. Panov OriginalPaper Pages: 110 - 115
Model and Logic Gates for Quantum Computing with a Two-Level System in a Resonant-Frequency Field A. L. DanilyukV. E. Borisenko OriginalPaper Pages: 116 - 121
Double-Junction Schottky Diodes Using a Ti/Si/Al Structure D. A. AndreevN. S. Grushko OriginalPaper Pages: 122 - 125
Statistical Process Control in IC Manufacture: A Technique for Small-Batch, Intermittent Production K. K. DoroshevichV. N. PopovS. A. Strizhkov OriginalPaper Pages: 130 - 136