1. In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III

   • A. A. Orlikovskii
   • K. V. Rudenko

   OriginalPaper Pages: 275 - 294

2. Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2

   • A. G. Vasiliev
   • R. A. Zakharov
   • I. A. Horin

   OriginalPaper Pages: 295 - 302

3. Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer

   • V. M. Mordvintsev
   • S. E. Kudryavtsev

   OriginalPaper Pages: 303 - 311

4. Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2

   • E. I. Gol'dman
   • Yu. V. Gulyaev
   • G. V. Chucheva

   OriginalPaper Pages: 312 - 316

5. Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities

   • G. Ya. Krasnikov
   • N. A. Zaitsev
   • I. V. Matyushkin

   OriginalPaper Pages: 317 - 323

6. Local Modification of the Optical Constants of Polymeric Films by Ion Implantation

   • A. V. Leont'ev

   OriginalPaper Pages: 324 - 329

7. Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture

   • A. I. Stognij
   • Yu. V. Timoshkov
   • E. V. Lobko

   OriginalPaper Pages: 330 - 334

8. The Effect of Contact Window Cleaning and Doping in BF3+ H2and BF3+ H2+ CF4Plasmas on the Mo–p+-Si Contact Resistance

   • Yu. P. Snitovskii
   • S. F. Sen'ko

   OriginalPaper Pages: 335 - 338

9. Electron-Beam Two-Stream Instability in Quantum-Effect Structures

   • A. E. Dubinov

   OriginalPaper Pages: 339 - 341