In situDiagnostics of Plasma Processes in Microelectronics: The Current Status and Immediate Prospect, Part III A. A. OrlikovskiiK. V. Rudenko OriginalPaper Pages: 275 - 294
Phase Formation during the Surface-Diffusion Growth of Ti–Co–Si–N and Ti–Co–N Thin Films on Si and SiO2 A. G. VasilievR. A. ZakharovI. A. Horin OriginalPaper Pages: 295 - 302
Electroforming of Si/SiO2 /W Structures with an Exposed Nanometer-Thick SiO2Layer V. M. MordvintsevS. E. Kudryavtsev OriginalPaper Pages: 303 - 311
Si/SiO2Structures with Quantum Size Effects: The Construction of a Low-Dimensional Nanoscale Electronic System in the Interface Layer of Si by Incorporating a Regularly Distributed Charge into SiO2 E. I. Gol'dmanYu. V. GulyaevG. V. Chucheva OriginalPaper Pages: 312 - 316
Tunneling in MOS Systems: The Dependence of the Effective Barrier Height on the Structure of the Transition Layer at the Si/SiO2Interface in the Presence of Impurities G. Ya. KrasnikovN. A. ZaitsevI. V. Matyushkin OriginalPaper Pages: 317 - 323
Local Modification of the Optical Constants of Polymeric Films by Ion Implantation A. V. Leont'ev OriginalPaper Pages: 324 - 329
Reactive Ion-Beam Etching of Thick Polyimide Layers in an Oxygen + Argon Mixture A. I. StognijYu. V. TimoshkovE. V. Lobko OriginalPaper Pages: 330 - 334
The Effect of Contact Window Cleaning and Doping in BF3+ H2and BF3+ H2+ CF4Plasmas on the Mo–p+-Si Contact Resistance Yu. P. SnitovskiiS. F. Sen'ko OriginalPaper Pages: 335 - 338
Electron-Beam Two-Stream Instability in Quantum-Effect Structures A. E. Dubinov OriginalPaper Pages: 339 - 341
