1. Institute for design problems in microelectronics, Russian Academy of Sciences (IPPM RAS), Moscow, Russia

   OriginalPaper 09 November 2011 Pages: 369 - 370

2. Electrical parameters and the plasma composition in HCl-H₂ mixtures

   • A. M. Efremov
   • A. V. Yudina
   • V. I. Svettsov

   Low-Temperature Plasma Diagnostics 09 November 2011 Pages: 371 - 378

3. Spectral study of HCl plasma etching of gallium arsenide

   • A. V. Dunaev
   • S. A. Pivovarenok
   • V. I. Svettsov

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 379 - 382

4. Formation of thin-film HfO₂/Si(100) structures by high-frequency magnetron sputtering

   • V. I. Rudakov
   • E. A. Bogoyavlenskaya
   • V. V. Naumov

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 383 - 388

5. Control of the formation of ultrathin CoSi₂ layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

   • V. I. Rudakov
   • Yu. I. Denisenko
   • S. G. Simakin

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 389 - 394

6. Wave phenomena in the finishing of diamond crystals

   • S. M. Pintus
   • V. Yu. Karasev
   • E. V. Gladchenkov

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 395 - 402

7. Low-temperature pulsed vapor-phase deposition of thin layers of metal ruthenium for micro- and nanoelectronics. Part 5. Interrelation of growth regularities, structure, and properties of ruthenium layers

   • V. Yu. Vasilyev

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 403 - 413

8. Optical maskless lithography

   • G. V. Belokopytov
   • Yu. V. Ryzhkova

   Technological Processes in Micro- and Nanoelectronics 09 November 2011 Pages: 414 - 427

9. Determination of the size of vacancy-type defects in angstrom ranges by positron annihilation spectroscopy

   • V. I. Grafutin
   • I. N. Meshkov
   • S. L. Yakovenko

   Measurements 09 November 2011 Pages: 428 - 435

10. Scanning electron microscopy used to measure the feature dimensions of a nanoscale test pattern on a silicon surface

    • V. P. Gavrilenko
    • Yu. V. Larionov
    • V. A. Sharonov

    Nanometrology 09 November 2011 Pages: 436 - 440