1. Effect of surface roughness on the temperature of a silicon wafer heated by incoherent radiation

   • V. I. Rudakov
   • V. V. Ovcharov
   • V. P. Prigara

   Technological Processes in Microand Nanoelectronics 21 January 2010 Pages: 1 - 11

2. A new technology for manufacturing the dielectric isolation of elements of microelectronic devices by oxidizing grooves in single-crystal silicon

   • Yu. P. Snitovskii
   • M. G. Krasikov

   Technological Processes in Microand Nanoelectronics 21 January 2010 Pages: 12 - 18

3. Diagnosing reliability of integrated circuits using noises and the ESD effect

   • M. I. Gorlov
   • D. Yu. Smirnov
   • R. M. Tikhonov

   Technological Processes in Micro- and Nanoelectronics 21 January 2010 Pages: 19 - 25

4. Low-temperature pulsed CVD of ruthenium thin films for micro- and nanoelectronic applications, Part 1: Equipment and methodology

   • V. Yu. Vasilyev

   Thin Films 21 January 2010 Pages: 26 - 33

5. Determination of the diffusion length of charge minority carriers using digital oscillography of surface photovoltage

   • V. N. Podshivalov

   Semiconductor Devices 21 January 2010 Pages: 34 - 41

6. Offset voltage of an integrated magnetotransistor sensor

   • R. D. Tikhonov

   Semiconductor Devices 21 January 2010 Pages: 42 - 53

7. Low-voltage arithmetic units based on fully depleted SOI CMOS nanotransistors

   • N. V. Masal’skii

   Circuit Analysis and Synthesis 21 January 2010 Pages: 54 - 62

8. Intersubband optical transitions in InAs/GaSb quantum wells

   • I. A. Semenikhina
   • A. A. Zakharova
   • K. A. Chao

   Modeling and Simulation 21 January 2010 Pages: 63 - 72