1. C-V and I-V characteristics of ultrathin-oxide MOS structures: Identification and analysis

   • A. G. Zhdan
   • G. V. Chucheva
   • V. G. Naryshkina

   Process Technologies Pages: 139 - 147

2. Submicrometer josephson junction as a sensor of current states in a mesoscopic superconducting structure

   • I. N. Zhilyaev

   Microelectronic Devices Pages: 148 - 152

3. Effect of doping on the temperature coefficient of resistance of polysilicon films

   • A. A. Kovalevskii
   • A. V. Dolbik
   • S. N. Voitekh

   Thin Films Pages: 153 - 158

4. Phosphomolybdic acid-assisted thermal oxidation of GaAs

   • I. Ya. Mittova
   • S. S. Lavrushina
   • A. V. Popelo

   Thin Films Pages: 159 - 163

5. Polymer surface deformation under semicontact-mode AFM scanning

   • A. B. Petrov
   • R. R. Gallyamov

   Thin Films Pages: 164 - 170

6. Transformation of a Gaussian doping profile in a temperature field as influenced by the temperature dependence of the diffusion coefficient

   • V. V. Ovcharov
   • V. I. Rudakov

   Diffusion in Silicon Pages: 171 - 178

7. Plasma etching of poly-Si/SiO₂/Si structures: Langmuir-probe and optical-emission-spectroscopy monitoring

   • K. V. Rudenko
   • A. V. Myakon’kikh
   • A. A. Orlikovsky

   Plasma Diagnostics Pages: 179 - 192

8. Simulating quantum dynamics in terms of classical collective behavior

   • Y. I. Ozhigov

   Modeling and Simulation Pages: 193 - 202

9. Zn-P complex in Si: An ab-initio calculation of the structure and electron-spin properties

   • A. I. Aleksandrov
   • S. N. Dobryakov
   • V. V. Privezentsev

   Quantum Computing Pages: 203 - 207