Volume 10, Issue 3 | Plasma Chemistry and Plasma Processing

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Volume 10, Issue 3

September 1990

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7 articles in this issue

EPR investigation of plasma-chemical resist etching in O₂ and O₂/CF₄ discharges
F. -W. Breitbarth
E. Ducke
H. -J. Tiller
OriginalPaper Pages: 377 - 399
Deposition of silicon nitride thin films by reaction of SiH₄ in a nitrogen post-discharge
J. L. Jauberteau
D. Conte
A. Catherinot
OriginalPaper Pages: 401 - 417
Electron kinetics in a collision-dominated SiH₄ rf plasma including self-consistent rf field strength calculation
R. Winkler
M. Capitelli
J. Wilhelm
OriginalPaper Pages: 419 - 442
Catalytic activity of silica in ozone formation in electrical discharges
Kzysztof Schmidt-Szałowski
Anna Borucka
Sławomir Jodzis
OriginalPaper Pages: 443 - 450
Plasma polymerization anda-C:H film ablation in microwave discharges in methane diluted with argon and hydrogen
R. N. Rudolph
J. H. Moore
OriginalPaper Pages: 451 - 471
Nonequilibrium modeling of low-pressure argon plasma jets; Part I: Laminar flow
C. H. Chang
E. Pfender
OriginalPaper Pages: 473 - 491
Nonequilibrium modeling of low-pressure argon plasma jets; Part II: Turbulent flow
C. H. Chang
E. Pfender
OriginalPaper Pages: 493 - 500