Volume 7, Issue 5 | Journal of Materials Science: Materials in Electronics

Search all Journal of Materials Science: Materials in Electronics articles

Volume 7, Issue 5

October 1996

Filter by

Volume:

Sort by

Date published:

New to old Old to new

9 articles in this issue

Special issue: Papers from the UK IRC for semiconductor materials
Arthur Willoughby
Editorial Pages: iii - iii
Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate
N. R. Gardner
N. J. Woods
J. J. Harris
Papers Pages: 315 - 319
Epitaxial growth mode and silicon/silicon-germanium heterointerfaces
J. M. Fernández
L. Hart
B. A. Joyce
Papers Pages: 321 - 325
Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy
B. A. Joyce
J. H. Neave
T. S. Jones
Papers Pages: 327 - 332
STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-doping
J. L. Sudijono
A. R. Avery
T. S. Jones
Papers Pages: 333 - 339
Influence of segregation in quantum well structures
R. Murray
C. Bryan
S. Lycett
Papers Pages: 341 - 345
Novel aspects of oxygen diffusion in silicon
M. J. Binns
C. A. Londos
J. H. Tucker
Papers Pages: 347 - 353
Carbon δ-doping GaAs superlattices
B. R. Davidson
L. Hart
C. C. Button
Papers Pages: 355 - 360
A comparison of strain relief behaviour of In_x Ga_{1− x}As alloy on GaAs (001) and (110) substrates
X. Zhang
D. W. Pashley
Papers Pages: 361 - 367