An empirical density of states and joint density of states analysis of hydrogenated amorphous silicon: a review Stephen Karrer O'Leary OriginalPaper Pages: 401 - 410
Structural properties of relaxed Ge buffer layers on Si(0 0 1): effect of layer thickness and low temperature Si initial buffer T. MyrbergA. P. JacobD. Bensahel OriginalPaper Pages: 411 - 417
Electrochemical studies of n-Cd1−xMnxSe thin film photodetector V. S. KarandeS. H. ManeA. R. Wadgaonkar OriginalPaper Pages: 419 - 423
Properties and structure of semiconducting sodium iron germanoborate glasses M. M. El-DesokySherief M. Abo-Naf OriginalPaper Pages: 425 - 433
Preparation and characterization of gold/poly(vinyl alcohol)/MoS2 intercalation nanocomposite Tingmei WangWeimin LiuJun Tian OriginalPaper Pages: 435 - 438
Electrical, optical and structural characterization of high-k dielectric ZrO2 thin films deposited by the pyrosol technique G. Reyna-GarcíaM. García-HipólitoC. Falcony OriginalPaper Pages: 439 - 446
Dissolution kinetics and diffusivity of silver in glassy layers for hybrid microelectronics M. PrudenziatiB. MortenM. Leoni OriginalPaper Pages: 447 - 453
Redistribution of P atoms in oxidized P-implanted silicon during annealing Katsuhiro Yokota*Makoto AokiMasanori Watanabe OriginalPaper Pages: 455 - 461
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3 and H2S. Part I: Preparation and microstructural characterization of the tungsten-oxide thin films O. BergerW.-J. FischerV. Melev OriginalPaper Pages: 463 - 482
Tungsten-oxide thin films as novel materials with high sensitivity and selectivity to NO2, O3, and H2S. Part II: Application as gas sensors O. BergerT. HoffmannV. Melev OriginalPaper Pages: 483 - 493
