1. Editorial for Journal of Materials Science: Materials in Electronics

   • Arthur Willoughby

   Editorial Introduction Pages: 5 - 5

2. Electrical characterization of shallow cobalt-silicided junctions

   • E. Simoen
   • A. Poyai
   • E. Gaubas

   OriginalPaper Pages: 207 - 210

3. Processing factors influencing the leakage current in shallow junction diodes for deep submicro-meter CMOS

   • L. Grau
   • E. Augendre
   • A. Romano-Rodriguez

   OriginalPaper Pages: 211 - 214

4. Novel materials for thermal via incorporation into SOI structures

   • P. Baine
   • Khor Yeap Choon
   • S. J. N. Mitchell

   OriginalPaper Pages: 215 - 218

5. Antimony and boron diffusion in SiGe and Si under the influence of injected point defects

   • J. M. Bonar
   • A. F. W. Willoughby
   • M. G. Dowsett

   OriginalPaper Pages: 219 - 221

6. Early stages of oxygen aggregation and thermal donors in silicon annealed under hydrostatic pressure

   • V. V. Emtsev Jr
   • C. A. J. Ammerlaan
   • C. A. Londos

   OriginalPaper Pages: 223 - 225

7. Radiation damage of N-MOSFETS fabricated in a BiCMOS process

   • K. Kobayashi
   • H. Ohyama
   • S. Kohiki

   OriginalPaper Pages: 227 - 230

8. An electron paramagnetic resonance study of defects in PECVD silicon oxides

   • R. C. Barklie
   • M. Collins
   • I. Borde

   OriginalPaper Pages: 231 - 234

9. Fully relaxed Si_0.7Ge_0.3 buffers grown on patterned silicon substrates for hetero-CMOS transistors

   • G. Wöhl
   • E. Kasper
   • F. Ernst

   OriginalPaper Pages: 235 - 240

10. Evaluation of the infrared absorption in nm-thick heavily boron-doped Si_1-xGe_x layers on silicon

    • A. Cavaco
    • N. A. Sobolev
    • U. König

    OriginalPaper Pages: 241 - 243

11. Band offsets and electron transport calculation for strained Si_1-x-yGe_xC_y/Si heterostructures

    • P. Dollfus
    • S. Galdin
    • H. J. Osten

    OriginalPaper Pages: 245 - 248

12. Examination of the structural and optical failure of ultra-bright LEDs under varying degrees of electrical stress using synchrotron X-ray topography and optical emission spectroscopy

    • D. Lowney
    • P. J. McNally
    • A. N. Danilewsky

    OriginalPaper Pages: 249 - 253

13. Tunneling statistics and the manufacturability of semiconductor tunnel devices

    • R. K. Hayden
    • M. J. Kelly

    OriginalPaper Pages: 255 - 257

14. Raman active E₂ modes in aluminum nitride films

    • I. C. Oliveira
    • C. Otani
    • M. L. A. Temperini

    OriginalPaper Pages: 259 - 262

15. C–V, DLTS and conductance transient characterization of SiN_x:H/InP interface improved by N₂ remote plasma cleaning of the InP surface

    • H. Castán
    • S. Dueñas
    • G. González-Díaz

    OriginalPaper Pages: 263 - 267

16. Optical characterization of ZnO

    • C. Gaspar
    • F. Costa
    • T. Monteiro

    OriginalPaper Pages: 269 - 271

17. Electrical characterization of deep levels in N and P 6H-SiC Schottky diodes

    • N. Sghaier
    • A. K. Souifi
    • G. Guillot

    OriginalPaper Pages: 273 - 276

18. Studies of the formation of Ga and Al wires on Si(1 1 2) facet surfaces

    • S. M. Prokes
    • O. J. Glembocki

    OriginalPaper Pages: 277 - 283

19. Dislocation behavior in highly impurity-doped Si

    • I. Yonenaga

    OriginalPaper Pages: 285 - 288

20. Novel fabrication methods for submicrometer Josephson junction qubits

    • A. Potts
    • P. R. Routley
    • P. A. J. de Groot

    OriginalPaper Pages: 289 - 293

21. High-resolution X-ray diffraction and fast routine evaluation of graded hetero-epitaxial layers

    • J. F. Woitok

    OriginalPaper Pages: 295 - 298

22. Magnetic nanoparticles and nanoparticle assemblies from metallorganic precursors

    • Y. K. Gun'ko
    • S. C. Pillai
    • D. McInerney

    OriginalPaper Pages: 299 - 302

23. LPCVD of tungsten by selective deposition on silicon

    • F. X. Li
    • B. M. Armstrong
    • H. S. Gamble

    OriginalPaper Pages: 303 - 306

24. Surface electromigration of sputtered copper patterned using ion milling or chemical mechanical polishing

    • B. H. W. Toh
    • N. D. McCusker
    • V. Len

    OriginalPaper Pages: 307 - 312

25. Al/Si contacting of ultra-shallow epitaxially grown Si and SiGe junctions

    • Q. W. Ren
    • L. K. Nanver
    • J. W. Slotboom

    OriginalPaper Pages: 313 - 316

26. DLTS and conductance transient investigation on defects in anodic tantalum pentoxide thin films

    • S. Dueñas
    • H. Castán
    • P. A. Sullivan

    OriginalPaper Pages: 317 - 321

27. Growth and characterization of shape memory alloy thin films for Si microactuator technologies

    • N. Yaakoubi
    • C. Serre
    • N. Frantz-Rodriguez

    OriginalPaper Pages: 323 - 326

28. Characterization of CVD tungsten deposited by silane reduction

    • M. F. Bain
    • B. M. Armstrong
    • H. S. Gamble

    OriginalPaper Pages: 327 - 331

29. Effect of nitridation on Fowler–Nordheim tunneling coefficients in SiO₂ MOS capacitors with WSi₂-polysilicon gate

    • S. Croci
    • C. Plossu
    • P. Boivin

    OriginalPaper Pages: 333 - 338

30. Electrical detection and simulation of stress in silicon nitride spacer technology

    • H. W. van Zeijl
    • S. Mijalcovic
    • L. K. Nanver

    OriginalPaper Pages: 339 - 341

31. Electrical and structural characterization of DLC films deposited by magnetron sputtering

    • M. Massi
    • H. S. Maciel
    • P. Verdonck

    OriginalPaper Pages: 343 - 346

32. Dielectric properties of thin solid films formed on silicon

    • P. C. Fannin
    • T. S. Perova
    • H. S. Gamble

    OriginalPaper Pages: 347 - 350

33. Spectroscopic characteristics of SiO and SiO₂ solid films: Assignment and local field effect influence

    • I. I. Shaganov
    • T. S. Perova
    • K. Berwick

    OriginalPaper Pages: 351 - 355