1. Special issue: Papers from the UK IRC for semiconductor materials

   • Arthur Willoughby

   Editorial Pages: iii - iii

2. Characteristics of lateral pn junctions grown on (100) GaAs patterned substrate

   • N. R. Gardner
   • N. J. Woods
   • J. J. Harris

   Papers Pages: 315 - 319

3. Epitaxial growth mode and silicon/silicon-germanium heterointerfaces

   • J. M. Fernández
   • L. Hart
   • B. A. Joyce

   Papers Pages: 321 - 325

4. Growth dynamics of GaAs, AlAs and (Al, Ga)As on GaAs (110) and (111)A substrates during molecular beam epitaxy

   • B. A. Joyce
   • J. H. Neave
   • T. S. Jones

   Papers Pages: 327 - 332

5. STM studies of island formation and surface ordering of Si on GaAs (001), (2×4) and c(4×4): Implications for δ-doping

   • J. L. Sudijono
   • A. R. Avery
   • T. S. Jones

   Papers Pages: 333 - 339

6. Influence of segregation in quantum well structures

   • R. Murray
   • C. Bryan
   • S. Lycett

   Papers Pages: 341 - 345

7. Novel aspects of oxygen diffusion in silicon

   • M. J. Binns
   • C. A. Londos
   • J. H. Tucker

   Papers Pages: 347 - 353

8. Carbon δ-doping GaAs superlattices

   • B. R. Davidson
   • L. Hart
   • C. C. Button

   Papers Pages: 355 - 360

9. A comparison of strain relief behaviour of In _x Ga_{1− x} As alloy on GaAs (001) and (110) substrates

   • X. Zhang
   • D. W. Pashley

   Papers Pages: 361 - 367