Monte Carlo simulation of nanoelectronic devices F. GamizA. GodoyF. Jimenez-Molinos OriginalPaper 15 October 2009 Pages: 174 - 191
Modeling of modern MOSFETs with strain V. SverdlovO. BaumgartnerS. Selberherr OriginalPaper 22 October 2009 Pages: 192 - 208
Semi-classical transport modelling of CMOS transistors with arbitrary crystal orientations and strain engineering D. EsseniF. ConzattiL. Selmi OriginalPaper 29 August 2009 Pages: 209 - 224
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion S.-M. HongC. Jungemann OriginalPaper 01 October 2009 Pages: 225 - 241
On the numerical aspects of deterministic multisubband device simulations for strained double gate PMOSFETs Anh-Tuan PhamChristoph JungemannBernd Meinerzhagen OriginalPaper 15 October 2009 Pages: 242 - 266
Ballistic quantum transport using the contact block reduction (CBR) method Stefan BirnerChristoph SchindlerPeter Vogl OriginalPaper 03 October 2009 Pages: 267 - 286
A new F(ast)-CMS NEGF algorithm for efficient 3D simulations of switching characteristics enhancement in constricted tunnel barrier silicon nanowire MuGFETs Aryan AfzalianNima Dehdashti AkhavanJean-Pierre Colinge OriginalPaper 01 September 2009 Pages: 287 - 306
Modeling drive currents and leakage currents: a dynamic approach Wim MagnusFons BrosensBart Sorée OriginalPaper 29 September 2009 Pages: 307 - 323
Wigner-Boltzmann Monte Carlo approach to nanodevice simulation: from quantum to semiclassical transport Damien QuerliozHuu-Nha NguyenPhilippe Dollfus OriginalPaper 19 August 2009 Pages: 324 - 335
Quantum transport including nonparabolicity and phonon scattering: application to silicon nanowires Aniello EspositoMartin FreyAndreas Schenk OriginalPaper 21 July 2009 Pages: 336 - 348
Simulation of statistical variability in nano-CMOS transistors using drift-diffusion, Monte Carlo and non-equilibrium Green’s function techniques Asen AsenovAndrew R. BrownScott Roy OriginalPaper 19 September 2009 Pages: 349 - 373
Full quantum treatment of surface roughness effects in Silicon nanowire and double gate FETs Marco G. PalaClaudio BuranMireille Mouis OriginalPaper 15 September 2009 Pages: 374 - 381
Nanowire transistor modeling: influence of ionized impurity and correlation effects Marc BescondChangsheng LiMichel Lannoo OriginalPaper 05 August 2009 Pages: 382 - 388
Comprehensive modeling of optoelectronic nanostructures Bernd WitzigmannRatko G. VeprekJan Kupec OriginalPaper 10 July 2009 Pages: 389 - 397
Modeling of Dye sensitized solar cells using a finite element method Alessio GagliardiMatthias Auf der MaurAldo Di Carlo OriginalPaper 06 October 2009 Pages: 398 - 409
Modeling of circuits and architectures for molecular electronics Paolo LugliGyorgy CsabaChristoph Erlen OriginalPaper 03 November 2009 Pages: 410 - 426
Computational study of carbon-based electronics Mahdi PourfathHans Kosina OriginalPaper 01 September 2009 Pages: 427 - 440
An investigation of performance limits of conventional and tunneling graphene-based transistors R. GrassiA. GnudiG. Baccarani OriginalPaper 26 August 2009 Pages: 441 - 450