Scaling dependence of electron transport in nano-scale Schottky barrier MOSFETs Shuichi ToriyamaNobuyuki Sano OriginalPaper 22 October 2008 Pages: 471 - 474
General 2D Schrödinger-Poisson solver with open boundary conditions for nano-scale CMOS transistors M. Ali PourghaderiWim MagnusMarc Heyns OriginalPaper 03 September 2008 Pages: 475 - 484
A numerical method for a transient quantum drift-diffusion model arising in semiconductor devices Tomoko ShimadaShinji Odanaka OriginalPaper 07 September 2008 Pages: 485 - 493
Development of electronic device simulations for educational purposes William R. Frensley OriginalPaper 16 September 2008 Pages: 494 - 499
Atomistic modeling of the electrostatic and transport properties of a simplified nanoscale field effect transistor Li-Na ZhaoXue-Feng WangTeck-Seng Lee OriginalPaper 23 September 2008 Pages: 500 - 508
Unified simulation of transport and luminescence in optoelectronic nanostructures Sebastian SteigerRatko G. VeprekBernd Witzigmann OriginalPaper 01 October 2008 Pages: 509 - 520
Reliable kâ‹…p band structure calculation for nanostructures using finite elements Ratko G. VeprekSebastian SteigerBernd Witzigmann OriginalPaper 02 October 2008 Pages: 521 - 529