Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model Deep ShahNicolas A. BruqueRajeev R. Pandey OriginalPaper 14 April 2007 Pages: 395 - 400
An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations Clemens HeitzingerChristian Ringhofer OriginalPaper 05 May 2007 Pages: 401 - 408
Inverse dopant profiling from transient measurements M.-T. Wolfram OriginalPaper 15 May 2007 Pages: 409 - 420
Drain temperature determination in dual-gate GaAs MESFETs M. Kameche OriginalPaper 06 June 2007 Pages: 421 - 424
Engineering model of a biased metal–molecule–metal junction Matthieu CaussanelRonald D. SchrimpfSokrates T. Pantelides Original Paper 23 June 2007 Pages: 425 - 430
Modeling and simulation of silicon neuron-to-ISFET junction Giuseppe MassobrioPaolo MassobrioSergio Martinoia OriginalPaper 29 August 2007 Pages: 431 - 437
Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs M. Jagadesh KumarVivek VenkataramanSusheel Nawal OriginalPaper 19 September 2007 Pages: 439 - 444