1. Electronic properties of carbon nanotubes calculated from density functional theory and the empirical π-bond model

   • Deep Shah
   • Nicolas A. Bruque
   • Rajeev R. Pandey

   OriginalPaper 14 April 2007 Pages: 395 - 400

2. An effective quantum potential for particle–particle interactions in three-dimensional semiconductor device simulations

   • Clemens Heitzinger
   • Christian Ringhofer

   OriginalPaper 05 May 2007 Pages: 401 - 408

3. Inverse dopant profiling from transient measurements

   • M.-T. Wolfram

   OriginalPaper 15 May 2007 Pages: 409 - 420

4. Drain temperature determination in dual-gate GaAs MESFETs

   • M. Kameche

   OriginalPaper 06 June 2007 Pages: 421 - 424

5. Engineering model of a biased metal–molecule–metal junction

   • Matthieu Caussanel
   • Ronald D. Schrimpf
   • Sokrates T. Pantelides

   Original Paper 23 June 2007 Pages: 425 - 430

6. Modeling and simulation of silicon neuron-to-ISFET junction

   • Giuseppe Massobrio
   • Paolo Massobrio
   • Sergio Martinoia

   OriginalPaper 29 August 2007 Pages: 431 - 437

7. Comprehensive approach to modeling threshold voltage of nanoscale strained silicon SOI MOSFETs

   • M. Jagadesh Kumar
   • Vivek Venkataraman
   • Susheel Nawal

   OriginalPaper 19 September 2007 Pages: 439 - 444