Volume 16, Issue 4, December 2017

Special Focus Topic Issue on Computational Electronics of Emerging Memory Elements

Issue Editors:

ISSN: 1569-8025 (Print) 1572-8137 (Online)

In this issue (22 articles)

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  1. No Access

    S.I.: Computational Electronics of Emerging Memory Elements

    Grüneisen parameters and thermal conductivity in the phase change compound GeTe

    Emanuele Bosoni, Gabriele Cesare Sosso Pages 997-1002
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    S.I.: Computational Electronics of Emerging Memory Elements

    Comprehensive modeling of electrochemical metallization memory cells

    Stephan Menzel Pages 1017-1037
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    S.I. : Computational Electronics of Emerging Memory Elements

    Ab initio modeling of transport and thermodynamic stability for hafnia memristive devices

    Xiaoliang Zhong, Ivan Rungger, Peter Zapol Pages 1066-1076
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    S.I. : Computational Electronics of Emerging Memory Elements

    Toward reliable RRAM performance: macro- and micro-analysis of operation processes

    Gennadi Bersuker, Dmitry Veksler Pages 1085-1094
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    S.I.: Computational Electronics of Emerging Memory Elements

    \({ SIM}^2{ RRAM}\) : a physical model for RRAM devices simulation

    Marco A. Villena, Juan B. Roldán Pages 1095-1120
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    S.I.: Computational Electronics of Emerging Memory Elements

    Stochastic circuit breaker network model for bipolar resistance switching memories

    S. Brivio, S. Spiga Pages 1154-1166
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    S.I.: Computational Electronics of Emerging Memory Elements

    Cross-point memory design challenges and survey of selector device characteristics

    Xiaochen Peng, Ryan Madler, Pai-Yu Chen, Shimeng Yu Pages 1167-1174
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    S.I.: Computational Electronics of Emerging Memory Elements

    Design rules for threshold switches based on a field triggered thermal runaway mechanism

    Carsten Funck, Susanne Hoffmann-Eifert Pages 1175-1185
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    S.I. : Computational Electronics of Emerging Memory Elements

    Memory selector devices and crossbar array design: a modeling-based assessment

    An Chen Pages 1186-1200
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    S.I.: Computational Electronics of Emerging Memory Elements

    From materials to systems: a multiscale analysis of nanomagnetic switching

    Yunkun Xie, Jianhua Ma, Samiran Ganguly Pages 1201-1226
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