Full Band Monte Carlo Simulation of Wurtzite AlGaN/GaN MODFETs Baozeng GuoUmberto Ravaioli OriginalPaper Pages: 309 - 311
Parameterization of Continuum Theories for Single Wall Carbon Nanotube Switches by Molecular Dynamics Simulations Marc DequesnesS.V. RotkinN.R. Aluru OriginalPaper Pages: 313 - 316
Atomistic Electronic Structure Calculations of Unstrained Alloyed Systems Consisting of a Million Atoms Fabiano OyafusoGerhard KlimeckTimothy B. Boykin OriginalPaper Pages: 317 - 321
Many-Body Terms in van der Waals Cohesion Energy of Nanotubes Slava V. RotkinKarl Hess OriginalPaper Pages: 323 - 326
Phonons in Wurtzites, Fullerenes, and Nanotubes M. StroscioM. DuttaK.W. Kim OriginalPaper Pages: 327 - 330
Three-Dimensional Continuum Simulations of Ion Transport Through Biological Ion Channels: Effect of Charge Distribution in the Constriction Region of Porin T.A. van der StraatenJ. TangN.R. Aluru OriginalPaper Pages: 335 - 340
Excessive Over-Relaxation Method for Multigrid Poisson Solvers C. MillarA. AsenovJ.R. Watling OriginalPaper Pages: 341 - 345
Electrodiffusion Model Simulation of Rectangular Current Pulses in a Biological Channel Carl L. GardnerJoseph W. JeromeRobert S. Eisenberg OriginalPaper Pages: 347 - 351
Computer Simulation Studies of the Selectivity and Conductance of A Model Calcium Channel Yan YangDezsö BodaDavid Busath OriginalPaper Pages: 353 - 357
Efficient Poisson Solver for Semiconductor Device Modeling Using the Multi-Grid Preconditioned BiCGSTAB Method G. SpeyerD. VasileskaS.M. Goodnick OriginalPaper Pages: 359 - 363
A WENO-Solver for the 1D Non-Stationary Boltzmann–Poisson System for Semiconductor Devices José A. CarrilloIrene M. GambaChi-Wang Shu OriginalPaper Pages: 365 - 370
An Improved Energy Transport Model Suitable for Simulation of Partially Depleted SOI MOSFETs H. KosinaM. GritschS. Selberherr OriginalPaper Pages: 371 - 374
On the Breakdown of Universal Mobility Curves: A Brownian 3D Simulation Framework Savas KayaAsen AsenovScott Roy OriginalPaper Pages: 375 - 379
Simulation of Transport and Noise Properties of SILCs Through Thin-Oxide MOS Structures G. IannacconeM. Macucci OriginalPaper Pages: 381 - 384
Benchmarking Macroscopic Transport Models for Nanotransistor TCAD Jung-Hoon RhewZhibin RenMark S. Lundstrom OriginalPaper Pages: 385 - 388
Discretization Scheme for the Density-Gradient Equation and Effect of Boundary Conditions Ting-Wei TangXinlin WangYiming Li OriginalPaper Pages: 389 - 393
A Multi-Carrier Model for Interface Trap Generation William McMahonKarl Hess OriginalPaper Pages: 395 - 398
Electronic Bandstructure and Transport Properties of Self-Organised Organic-Inorganic Heterostructures A. PecchiaR.W. KelsallN. Boden OriginalPaper Pages: 399 - 403
Generic Particle-Mesh Framework for the Simulation of Ionic Channels C. MillarA. AsenovJ.M. Cooper OriginalPaper Pages: 405 - 409
Low-Rank Update Eigensolver for Supercell Band Structure Calculations Ming GuBeresford ParlettJianlin Xia OriginalPaper Pages: 411 - 414
A Computationally Efficient Simulator for Three-Dimensional Monte Carlo Simulation of Ion Implantation into Complex Structures Di LiGeng WangSanjay K. Banerjee OriginalPaper Pages: 415 - 419
Impact Ionization in GaAs within A Screened Exchange Density Functional Formalism S. PicozziR. AsahiA.J. Freeman OriginalPaper Pages: 421 - 424
Phonon Scattering Effects on Temperature Dependence of Conductivity in Strained Silicon Kazunori Matsuda OriginalPaper Pages: 425 - 429
Solutions to the Fermi-Dirac Integrals in Semiconductor Physics Using Polylogarithms Marc D. UlrichWilliam F. SengPeter A. Barnes OriginalPaper Pages: 431 - 434
Finite-Difference Schemes for the Density-Gradient Equations M.G. Ancona OriginalPaper Pages: 435 - 443
