International xonference on radiative recombination and related phenomena in III-V compound semiconductors J. Pastrnak OriginalPaper Pages: 243 - 244
State-of-the art and prospects of AIIIBV science and technology Zh. I. Alferov OriginalPaper Pages: 245 - 261
Liquid-phase epitaxy of electroluminescent AlGaAs heterostructures V. M. Andreev OriginalPaper Pages: 262 - 271
Recent developments in the optical spectroscopy of II–VI compound semiconductors P. J. Dean OriginalPaper Pages: 272 - 287
The growth of Al x Ga1−x As-GaAs heterostructure lasers by metalorganic chemical vapor deposition R. D. Dupuis OriginalPaper Pages: 288 - 299
Degradation of DH lasers caused by growth of dislocation networks T. Figielski OriginalPaper Pages: 318 - 325
The efficiency and radiative lifetime concentration dependences for the direct band-gap GaAs-like semiconductors D. Z. Garbuzov OriginalPaper Pages: 326 - 335
Degradation phenomena in gallium aluminium arsenide stripe geometry lasers D. H. NewmanS. Ritchie OriginalPaper Pages: 336 - 344
Radiative recombination in hydrogenated amorphous silicon J. I. Pankove OriginalPaper Pages: 355 - 364