Abstract
Carbon nanotubes (CNTs) are promising materials for both high performance transistors for high speed computing and thin film transistors for macroelectronics, which can provide more functions at low cost. Among macroelectronics applications, carbon nanotube thin film transistors (CNT-TFT) are expected to be used soon for backplanes in flat panel displays (FPDs) due to their superior performance. In this paper, we review the challenges of CNT-TFT technology for FPD applications. The device performance of state-of-the-art CNT-TFTs are compared with the requirements of TFTs for FPDs. Compatibility of the fabrication processes of CNT-TFTs and current TFT technologies are critically examined. Though CNT-TFT technology is not yet ready for backplane production line of FPDs, the challenges can be overcome by close collaboration between research institutes and FPD manufacturers in the short term.
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References
Iijima S (1991) Nature 354:56. doi:10.1038/354056a0
Iijima S, Ichihashi T (1993) Nature 363:603. doi:10.1038/363603a0
Saito R, Dresselhaus G, Dresselhaus MS (1998) Physical properties of carbon nanotubes. Imperial College Press, UK
International technology roadmap for semiconductors www.itrs.net
Franklin AD (2013) Nature 498:443. doi:10.1038/498443a
Tulevski GS, Franklin AD, Frank D, Lobez JM, Cao Q, Park H, Afzali A, Han S-J, Hannon JB, Haensch W (2014) ACS Nano 8:8730. doi:10.1021/nn503627h
Pei T, Zhang PP, Zhang ZY, Qiu CG, Liang SB, Yang YJ, Wang S, Peng LM (2014) Nano Lett 14:3102. doi:10.1021/nl5001604
Ding L, Zhang ZY, Liang SB, Pei T, Wang S, Li Y, Zhou WW, Liu J, Peng LM (2012) Nature Communications 3. doi:10.1038/ncomms1682
Shulaker MM, Hills G, Patil N, Wei H, Chen HY, PhilipWong HS, Mitra S (2013) Nature 501:526. doi:10.1038/nature12502
Chen B, Zhang P, Ding L, Han J, Qiu S, Li Q, Zhang Z, Peng L-M (2016) Nano Lett 16:5120. doi:10.1021/acs.nanolett.6b02046
Waldrop MM (2016) Nature 530:144. doi:10.1038/530144a
Brotherton SD (2013) Introduction to thin film transistors—physics and technology of TFTs. Springer, New York
Zhang J, Fu Y, Wang C, Chen PC, Liu Z, Wei W, Wu C, Thompson ME, Zhou C (2011) Nano Lett 11:4852. doi:10.1021/nl202695v
Ishikawa FN, Chang HK, Ryu K, Chen PC, Badmaev A, De Arco LG, Shen GZ, Zhou CW (2009) ACS Nano 3:73. doi:10.1021/nn800434d
Wang C, Zhang JL, Ryu KM, Badmaev A, De Arco LG, Zhou CW (2009) Nano Lett 9:4285. doi:10.1021/nl902522f
Brady GJ, Joo Y, Wu MY, Shea MJ, Gopalan P, Arnold MS (2014) ACS Nano 8:11614. doi:10.1021/nn5048734
Sun DM, Liu C, Ren WC, Cheng HM (2013) Small 9:1188. doi:10.1002/smll.201203154
Wang C, Takei K, Takahashi T, Javey A (2013) Chem Soc Rev 42:2592. doi:10.1039/c2cs35325c
Park S, Vosguerichian M, Bao Z (2013) Nanoscale 5:1727. doi:10.1039/c3nr33560g
Cao Q, Kim HS, Pimparkar N, Kulkarni JP, Wang CJ, Shim M, Roy K, Alam MA, Rogers JA (2008) Nature 454:495. doi:10.1038/nature07110
Liyanage LS, Lee H, Patil N, Park S, Mitra S, Bao Z, Wong HS (2012) ACS Nano 6:451. doi:10.1021/nn203771u
Kim J, Hong D, Lee H, Shin Y, Park S, Khang Y, Lee M, Hong S (2013) The Journal of Physical Chemistry C 117
Lau PH, Takei K, Wang C, Ju Y, Kim J, Yu ZB, Takahashi T, Cho G, Javey A (2013) Nano Lett 13:3864. doi:10.1021/nl401934a
Chen P, Fu Y, Aminirad R, Wang C, Zhang J, Wang K, Galatsis K, Zhou C (2011) Nano Lett 11:5301. doi:10.1021/nl202765b
Kocabas C, Pimparkar N, Yesilyurt O, Kang SJ, Alam MA, Rogers JA (2007) Nano Lett 7:1195. doi:10.1021/nl062907m
Ohshima H (2014) Solid-state circuits conference (A-SSCC), 2014 IEEE Asian p 1
Zhang ZY, Liang XL, Wang S, Yao K, Hu YF, Zhu YZ, Chen Q, Zhou WW, Li Y, Yao YG, Zhang J, Peng LM (2007) Nano Lett 7:3603. doi:10.1021/nl0717107
Javey A, Guo J, Wang Q, Lundstrom M, Dai H (2003) Nature 424. doi:10.1038/nature01797
Park S, Vosguerichian M, Bao Z (2013) Nanoscale 5:1727. doi:10.1039/c3nr33560g
Xu W, Zhao J, Qian L, Han X, Wu L, Wu W, Song M, Zhou L, Su W, Wang C, Nie S, Cui Z (2014) Nanoscale 6:1589. doi:10.1039/c3nr04870e
Kim S, Kim S, Park J, Ju S, Mohammadi S (2010) ACS Nano 4:2994. doi:10.1021/nn1006094
Zou J, Zhang K, Li J, Zhao Y, Wang Y, Pillai SKR, Volkan Demir H, Sun X, Chan-Park MB, Zhang Q (2015) Sci Rep 5:11755. doi:10.1038/srep11755
Matsueda Y (2010) Digest of Int. Transistor Conf. 2010 Hyogo, Japan p 314
Toshio K, Kenji N, Hideo H (2010) Sci Technol Adv Mater 11:044305
Ohshima H (2014) SID Symp Digest Techn Pap 45:75. doi:10.1002/j.2168-0159.2014.tb00021.x
Wang L, Xu M, Lan L, Zou J, Tao H, Xu H, Li M, Luo D, Peng J (2013) Sci Sin Chim 43:1383. doi:10.1360/032013-293
Cunningham KL (2014) Nanochip Fab Solut 9:24
Tian B, Liang X, Yan Q, Zhang H, Xia J, Dong G, Peng L, Xie S (2016) J Appl Phys 120:034501. doi:10.1063/1.4958850
Brady GJ, Joo Y, Singha Roy S, Gopalan P, Arnold MS (2014) Appl Phys Lett 104:083107. doi:10.1063/1.4866577
Sun DM, Timmermans MY, Kaskela A, Nasibulin AG, Kishimoto S, Mizutani T, Kauppinen EI, Ohno Y (2013) Nat Commun 4:2302. doi:10.1038/ncomms3302
Sun DM, Timmermans MY, Tian Y, Nasibulin AG, Kauppinen EI, Kishimoto S, Mizutani T, Ohno Y (2011) Nat Nanotechnol 6:156. doi:10.1038/Nnano.2011.1
Kang SJ, Kocabas C, Ozel T, Shim M, Pimparkar N, Alam MA, Rotkin SV, Rogers JA (2007) Nat Nanotechnol 2:230. doi:10.1038/nnano.2007.77
Dresselhaus MS, Dresselhaus G, Avouris P (eds) (2001) Carbon nanotubes: synthesis, structure, properties, and applications. Springer, Heidelberg
Choi YS, Yun JU, Park SE (2016) J Non Cryst Solids 431:2. doi:10.1016/j.jnoncrysol.2015.05.007
Kang SJ, Kocabas C, Kim HS, Cao Q, Meitl MA, Khang DY, Rogers JA (2007) Nano Lett 7:3343. doi:10.1021/nl071596s
Kumar S, Murthy JY, Alam MA (2005) Phys Rev Lett 95:066802. doi:10.1103/Physrevlett.95.066802
Alam MA, Pimparkar N, Kumar S, Murthy J (2006) MRS Bull 31:466. doi:10.1557/Mrs2006.120
Tu XM, Manohar S, Jagota A, Zheng M (2009) Nature 460:250. doi:10.1038/nature08116
Zheng M, Jagota A, Semke ED, Diner BA, Mclean RS, Lustig SR, Richardson RE, Tassi NG (2003) Nat Mater 2:338. doi:10.1038/nmat877
Nish A, Hwang J-Y, Doig J, Nicholas RJ (2007) Nat Nano 2:640. doi:10.1038/nnano.2007.290
Lee HW, Yoon Y, Park S, Oh JH, Hong S, Liyanage LS, Wang H, Morishita S, Patil N, Park YJ, Park JJ, Spakowitz A, Galli G, Gygi F, Wong PHS, Tok JBH, Kim JM, Bao Z (2011) Nat Commun 2:541. doi:10.1038/ncomms1545
Li H, Zhou B, Lin Y, Gu L, Wang W, Fernando KAS, Kumar S, Allard LF, Sun Y-P (2004) J Am Chem Soc 126:1014. doi:10.1021/ja037142o
Wang WZ, Li WF, Pan XY, Li CM, Li L-J, Mu YG, Rogers JA, Chan-Park MB (2011) Adv Funct Mater 21:1643. doi:10.1002/adfm.201002278
Liu H, Tanaka T, Urabe Y, Kataura H (2013) Nano Lett 13:1996. doi:10.1021/nl400128m
Liu H, Nishide D, Tanaka T, Kataura H (2011) Nat Commun 2:309. doi:10.1038/ncomms1313
Khripin CY, Fagan JA, Zheng M (2013) J Am Chem Soc 135:6822. doi:10.1021/ja402762e
Arnold MS, Green AA, Hulvat JF, Stupp SI, Hersam MC (2006) Nat Nano 1:60. doi:10.1038/nnano.2006.52
Tulevski GS, Franklin AD, Afzali A (2013) ACS Nano 7:2971. doi:10.1021/nn400053k
Ha M, Xia Y, Green AA, Zhang W, Renn MJ, Kim CH, Hersam MC, Frisbie CD (2010) ACS Nano 4:4388. doi:10.1021/nn100966s
Abdelhalim A, Abdellah A, Scarpa G, Lugli P (2014) Nanotechnology 25:055208. doi:10.1088/0957-4484/25/5/055208
Takahashi T, Takei K, Gillies AG, Fearing RS, Javey A (2011) Nano Lett 11:5408. doi:10.1021/nl203117h
Wang C, Chien JC, Takei K, Takahashi T, Nah J, Niknejad AM, Javey A (2012) Nano Lett 12:1527. doi:10.1021/nl2043375
Cao X, Chen H, Gu X, Liu B, Wang W, Cao Y, Wu F, Zhou C (2014) ACS Nano 8:12769. doi:10.1021/nn505979j
Joo Y, Brady GJ, Arnold MS, Gopalan P (2014) Langmuir 30:3460. doi:10.1021/la500162x
Zhang J, Wang C, Zhou C (2012) ACS Nano 6:7412. doi:10.1021/nn3026172
Qian L, Xu WY, Fan XF, Wang C, Zhang JH, Zhao JW, Cui Z (2013) J Phys Chem C 117:18243. doi:10.1021/jp4055022
Wang C, Qian L, Xu WY, Nie SH, Gu WB, Zhang JH, Zhao JW, Lin J, Chen Z, Cui Z (2013) Nanoscale 5:4156. doi:10.1039/c3nr34304a
LeMieux MC, Roberts M, Barman S, Jin YW, Kim JM, Bao Z (2008) Science 321:101. doi:10.1126/science.1156588
Opatkiewicz JP, LeMieux MC, Bao Z (2010) ACS Nano 4:1167. doi:10.1021/nn901388v
Engel M, Small JP, Steiner M, Freitag M, Green AA, Hersam MC, Avouris P (2008) ACS Nano 2:2445. doi:10.1021/nn800708w
Li X, Zhang L, Wang X, Shimoyama I, Sun X, Seo W-S, Dai H (2007) J Am Chem Soc 129:4890. doi:10.1021/ja071114e
Cao Q, Han SJ, Tulevski GS, Zhu Y, Lu DD, Haensch W (2013) Nat Nanotechnol 8:180. doi:10.1038/Nnano.2012.257
Shekhar S, Stokes P, Khondaker SI (2011) ACS Nano 5:1739. doi:10.1021/nn102305z
Cao Q, Han SJ, Tulevski GS (2014) Nat Commun 5:5071. doi:10.1038/ncomms6071
Monica AH, Papadakis SJ, Osiander R, Paranjape M (2008) Nanotechnology 19:085303. doi:10.1088/0957-4484/19/8/085303
Krupke R, Hennrich F, Löhneysen HV, Kappes MM (2003) Science 301: 344
Lau PH, Takei K, Wang C, Ju Y, Kim J, Yu Z, Takahashi T, Cho G, Javey A (2013) Nano Lett 13:3864. doi:10.1021/nl401934a
Xu W, Dou J, Zhao J, Tan H, Ye J, Tange M, Gao W, Xu W, Zhang X, Guo W, Ma C, Okazaki T, Zhang K, Cui Z (2016) Nanoscale 8:4588. doi:10.1039/c6nr00015k
Tans SJ, Verschueren ARM, Dekker C (1998) Nature 393:49
Zhu XM, Jiang CS, Yuan GC, Liu W, Li XY, Xin LB, Wang ML, Wang G (2015) SID symposium digest of technical papers, vol 46, p 1198. doi:10.1002/sdtp.10057
Li W, Liang YR, Yu DM, Peng LM, Pernstich KP, Shen T, Walker ARH, Cheng GJ, Hacker CA, Richter CA, Li QL, Gundlach DJ, Liang XL (2013) Appl Phys Lett 102. doi:10.1063/1.4804643
Li W, Hacker CA, Cheng GJ, Liang YR, Tian BY, Walker ARH, Richter CA, Gundlach DJ, Liang XL, Peng LM (2014) J Appl Phys 115. doi:10.1063/1.4868897
Leonard F, Tersoff J (2000) Phys Rev Lett 84:4693. doi:10.1103/PhysRevLett.84.4693
Ding L, Wang S, Zhang ZY, Zeng QS, Wang ZX, Pei T, Yang LJ, Liang XL, Shen J, Chen Q, Cui RL, Li Y, Peng LM (2009) Nano Lett 9:4209. doi:10.1021/nl9024243
Zhang Y, Franklin NW, Chen RJ, Dai HJ (2000) Chem Phys Lett 331:35. doi:10.1016/S0009-2614(00)01162-3
Chen ZH, Appenzeller J, Knoch J, Lin YM, Avouris P (2005) Nano Lett 5:1497. doi:10.1021/Nl0508624
Morrison NA, Stolley T, Hermanns U, Reus A, Deppisch T, Bolandi H, Melnik Y, Singh V, Griffith Cruz J (2015) Proc IEEE 103:518. doi:10.1109/jproc.2015.2408052
Wang P, Hwang J, Chuang A, Huang F-S (2000) Thin Solid Films 358:292. doi:10.1016/S0040-6090(99)00674-4
Franklin AD, Farmer DB, Haensch W (2014) ACS Nano 8:7333. doi:10.1021/nn5024363
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P (2002) Appl Phys Lett 80:3817. doi:10.1063/1.1480877
Sangwan VK, Ortiz RP, Alaboson JMP, Emery JD, Bedzyk MJ, Lauhon LJ, Marks TJ, Hersam MC (2012) ACS Nano 6:7480. doi:10.1021/nn302768h
Hur S-H, Yoon M-H, Gaur A, Shim M, Facchetti A, Marks TJ, Rogers JA (2005) J Am Chem Soc 127:13808. doi:10.1021/ja0553203
Dai YX (2010) Design and operation of TFT LCD panels. Tsinghua University Press, Beijing
Brotherton SD, Ayres JR, Young ND (1991) Solid State Electron 34:671. doi:10.1016/0038-1101(91)90002-G
Opatkiewicz JP, LeMieux MC, Liu D, Vosgueritchian M, Barman SN, Elkins CM, Hedrick J, Bao Z (2012) ACS Nano 6:4845. doi:10.1021/nn300124y
Cao Q, Han SJ, Tulevski GS, Franklin AD, Haensch W (2012) ACS Nano 6:6471. doi:10.1021/nn302185d
Liang Y, Xia J, Liang X (2016) Sci Bull 61:794. doi:10.1007/s11434-016-1075-1
Lin YM, Appenzeller J, Avouris P (2004) Nano Lett 4:947. doi:10.1021/nl049745j
Zhang J, Gui H, Liu B, Liu J, Zhou C (2013) Nano Res 6:906. doi:10.1007/s12274-013-0368-9
Qiu C, Zhang Z, Zhong D, Si J, Yang Y, Peng L-M (2015) ACS Nano 9:969. doi:10.1021/nn506806b
Wang ZX, Xu HL, Zhang ZY, Wang S, Ding L, Zeng QS, Yang LJ, Pei TA, Liang XL, Gao M, Peng LM (2010) Nano Lett 10:2024. doi:10.1021/nl100022u
Javey A, Tu R, Farmer DB, Guo J, Gordon RG, Dai HJ (2005) Nano Lett 5:345. doi:10.1021/nl047931j
Ha TJ, Kiriya D, Chen K, Javey A (2014) Acs Appl Mater Interfaces 6:8441. doi:10.1021/am5013326
Kim B, Franklin A, Nuckolls C, Haensch W, Tulevski GS (2014) Appl Phys Lett 105:063111. doi:10.1063/1.4891335
Kim W, Javey A, Vermesh O, Wang O, Li YM, Dai HJ (2003) Nano Lett 3:193. doi:10.1021/nl0259232
Park RS, Shulaker MM, Hills G, Suriyasena Liyanage L, Lee S, Tang A, Mitra S, Wong HSP (2016) ACS Nano 10:4599. doi:10.1021/acsnano.6b00792
Franklin AD, Tulevski GS, Han SJ, Shahrjerdi D, Cao Q, Chen HY, Wong HSP, Haensch W (2012) ACS Nano 6:1109. doi:10.1021/nn203516z
Shlafman M, Tabachnik T, Shtempluk O, Razin A, Kochetkov V, Yaish YE (2016) Appl Phys Lett 108:163104. doi:10.1063/1.4947099
Lefebvre J, Ding J, Li Z, Cheng F, Du N, Malenfant PRL (2015) Appl Phys Lett 107:243301. doi:10.1063/1.4937223
Ha TJ, Chen K, Chuang S, Yu KM, Kiriya D, Javey A (2015) Nano Lett 15:392. doi:10.1021/nl5037098
Seong N, Kim T, Kim H, Ha T-J, Hong Y (2015) Curr Appl Phys 15:S8. doi:10.1016/j.cap.2015.03.009
Zhang ZY, Wang S, Ding L, Liang XL, Pei T, Shen J, Xu HL, Chen O, Cui RL, Li Y, Peng LM (2008) Nano Lett 8:3696. doi:10.1021/nl8018802
Lee SW, Suh D, Lee SY, Lee YH (2014) Appl Phys Lett 104. doi:10.1063/1.4873316
Lee SW, Lee SY, Lim SC, Kwon Y-d, Yoon J-S, Uh K, Lee YH (2012) Appl Phys Lett 101:053504. doi:10.1063/1.4740084
Fuhrer MS, Nygard J, Shih L, Forero M, Yoon YG, Mazzoni MSC, Choi HJ, Ihm J, Louie SG, Zettl A, McEuen PL (2000) Science 288:494. doi:10.1126/science.288.5465.494
Liu Q, Luo G, Qin R, Li H, Yan X, Xu C, Lai L, Zhou J, Hou S, Wang E, Gao Z, Lu J (2011) Phys Rev B 83:155442. doi:10.1103/PhysRevB.83.155442
Pimparkar N, Alam MA (2008) Electron Device Lett IEEE 29:1037. doi:10.1109/led.2008.2001259
Xia J, Dong G, Tian B, Yan Q, Zhang H, Liang X, Peng L (2016) Nanoscale 8:9988. doi:10.1039/c6nr00876c
Choi SJ, Bennett P, Takei K, Wang C, Lo CC, Javey A, Bokor J (2013) ACS Nano 7:798. doi:10.1021/nn305277d
Yang YJ, Ding L, Zhang ZY, Peng LM (2016) 4th carbon nanotube thin film electronics and applications satellite. In: Seventeenth international conference of the science and applications of nanotubes and low-dimensional materials, University of Vienna, Austria
Shin K, Jeon H, Park CE, Kim Y, Cho H, Lee G, Han JH (2010) Org Electron 11:1403. doi:10.1016/j.orgel.2010.05.012
Barman SN, LeMieux MC, Baek J, Rivera R, Bao Z (2010) Acs Appl Mater Interfaces 2:2672. doi:10.1021/am1005223
Asada Y, Miyata Y, Ohno Y, Kitaura R, Sugai T, Mizutani T, Shinohara H (2010) Adv Mater 22:2698. doi:10.1002/adma.200904006
Lee CW, Han X, Chen F, Wei J, Chen Y, Chan-Park MB, Li L-J (2010) Adv Mater 22:1278. doi:10.1002/adma.200902461
LeMieux MC, Sok S, Roberts ME, Opatkiewicz JP, Liu D, Barman SN, Patil N, Mitra S, Bao Z (2009) ACS Nano 3:4089. doi:10.1021/nn900827v
Vosgueritchian M, LeMieux MC, Dodge D, Bao Z (2010) Acs Nano 4:6137. doi:10.1021/nn1012226
Yuki N, Yuki T, Shota G, Satoki M, Kazuhiro Y, Taishi T (2012) Jpn J Appl Phys 51:06FD15
Ohmori S, Ihara K, Nihey F, Kuwahara Y, Saito T (2012) Rsc Adv 2:12408. doi:10.1039/c2ra22272h
Asada Y, Nihey F, Ohmori S, Shinohara H, Saito T (2011) Adv Mater 23:4631. doi:10.1002/adma.201102806
Miyata Y, Shiozawa K, Asada Y, Ohno Y, Kitaura R, Mizutani T, Shinohara H (2011) Nano Res 4:963. doi:10.1007/s12274-011-0152-7
Zhang J, Wang C, Fu Y, Che Y, Zhou C (2011) Acs Nano 5:3284. doi:10.1021/nn2004298
Wang C, Zhang J, Zhou C (2010) Acs Nano 4:7123. doi:10.1021/nn1021378
Raman Pillai SK, Chan-Park MB (2012) Acs Applied Mater Interfaces 4:7047. doi:10.1021/am302431e
Lee CW, Raman Pillai SK, Luan X, Wang Y, Li CM, Chan-Park MB (2012) Small 8:2941. doi:10.1002/smll.201200041
Lee D, Seol M-L, Moon D-I, Bennett P, Yoder N, Humes J, Bokor J, Choi Y-K, Choi S-J (2014) Appl Phys Lett 104:143508. doi:10.1063/1.4871100
Tatsuya T, Hiroshi F, Mamoru F (2013) Jpn J Appl Phys 52:03BB09
Li Z, Ding J, Lefebvre J, Malenfant PRL (2015) Org Electron 26:15. doi:10.1016/j.orgel.2015.07.006
Yuki K, Fumiyuki N, Shigekazu O, Takeshi S (2015) Appl Phys Express 8:105101
Liu N, Yun KN, Yu H-Y, Shim JH, Lee CJ (2015) Appl Phys Lett 106:103106. doi:10.1063/1.4914400
Li G, Li Q, Jin Y, Zhao Y, Xiao X, Jiang K, Wang J, Fan S (2015) Nanoscale 7:17693. doi:10.1039/c5nr05036g
Wei L, Liu B, Wang X, Gui H, Yuan Y, Zhai S, Ng AK, Zhou C, Chen Y (2015) Adv Electron Mater 1:1500151. doi:10.1002/aelm.201500151
Cao C, Andrews JB, Kumar A, Franklin AD (2016) Acs Nano 10:5221. doi:10.1021/acsnano.6b00877
Gui H, Chen H, Khripin CY, Liu B, Fagan JA, Zhou C, Zheng M (2016) Nanoscale 8:3467. doi:10.1039/c5nr07329d
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This work was supported by the National Natural Science Foundation of China (Grant No. 61321001), National Key Research and Development program (Grant No. 2016YFA0201902), and BOE Technology Group, Co., Ltd.
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This article is part of the Topical Collection “Single-Walled Carbon Nanotubes: Preparation, Property and Application”; edited by Yan Li, Shigeo Maruyama.
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Liang, X., Xia, J., Dong, G. et al. Carbon Nanotube Thin Film Transistors for Flat Panel Display Application. Top Curr Chem (Z) 374, 80 (2016). https://doi.org/10.1007/s41061-016-0083-6
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DOI: https://doi.org/10.1007/s41061-016-0083-6