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Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe

基于各向异性二维GeSe的无偏振器偏振图像传感器

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Abstract

Light polarization could provide critical visual information (e.g., surface roughness, geometry, or orientation) of the imaged objects beyond prevailing signals of intensity and wavelength. The polarization imaging technology thus has a large potential in broad fields such as object detection. However, intricate polarization coding is often required in these fields, and the existing complicated lensed system and polarizers have limited the miniaturization capabilities of the integrated imaging sensor. In this study, we demonstrate the utilization of two-dimensional (2D) in-plane anisotropic α-GeSe semiconductor to realize the polarizer-free polarization-sensitive visible/near-infrared (VIS-NIR) photodetector/imager. As the key part of the sensor system, this prototype Au/GeSe/Au photodetector exhibits impressive performances in terms of high sensitivity, broad spectral response, and fast-speed operation (∼103 AW−1 400–1050 nm, and 22.7/49.5 µs). Further, this device demonstrates unique polarization sensitivity in the spectral range of 690–1050 nm and broadband absorption of light polarized preferentially in the γ-direction, as predicted by the analysis of optical transition behavior in α-GeSe. Then we have successfully incorporated the 2D GeSe device into an imaging system for the polarization imaging and captured the polarization information of the radiant target with a high contrast ratio of 3.45 at 808 nm (NIR band). This proposed imager reveals the ability to sense dual-band polarization signals in the scene without polarizers and paves the way for polarimetric imaging sensor arrays for advanced applications.

摘要

偏振是光的一个重要信息, 偏振探测可以把信息量从三维 (光强、光谱和空间)扩充到七维(光强、光谱、空间、偏振度、光 偏振等), 为成像物体提供关键的视觉信息(如表面粗糙度、几何形 状或方向), 因此偏振成像技术在目标检测等领域有着巨大的潜力. 然而这些领域往往需要复杂的偏振编码, 现有的复杂透镜系统和 偏振器限制了集成成像传感器的小型化能力. 本文通过二维各向 异性α-GeSe半导体, 成功实现了无偏振器的偏振敏感可见-近红外 光电探测器/成像仪. 作为传感器系统的关键部件, 该原型Au/GeSe/Au光电探测器具有灵敏度高、光谱响应宽、响应速度快 (~103 A W−1, 400–1050 nm, 22.7/49.5 μs)等优点. 此外, 该器件在 690–1050 nm光谱范围内表现出独特的偏振灵敏度, 并且对沿y方 向的偏振光吸收最强, 这一点通过分析α-GeSe的光跃迁行为也得 到了证实. 最后, 将2D-GeSe器件应用到成像系统中进行偏振成像, 在808 nm近红外波段处, 在不同的偏振方向上, 辐射目标的对比度 为3.45. 这种成像仪在没有偏振器的情况下, 能够在场景中感知双 频偏振信号, 为偏振成像传感器阵列的广泛应用奠定了基础.

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Acknowledgements

This work was supported by the National Natural Science Foundation of China (61622406, 61904015, 11674310, 61725505 and 11734016), the National Key Research and Development Program of China (2017YFA0207500), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), the “The Pearl River Talent Recruitment Program” (2019ZT08X639), and Beijing National Laboratory for Molecular Sciences (BNLMS201908).

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Authors and Affiliations

  1. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing, 100083, China

    Xiaoting Wang  (王晓亭), Longfei Pan  (潘龙飞), Ziqi Zhou  (周子琦), Yu Cui  (崔宇), Guozhen Shen  (沈国震) & Zhongming Wei  (魏钟鸣)

  2. State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, 200083, China

    Fang Zhong  (仲方), Hailu Wang  (王海露), Fang Wang  (王芳), Jianlu Wang  (王建禄) & Weida Hu  (胡伟达)

  3. Beijing Computational Science Research Center, Beijing, 100193, China

    Jun Kang  (康俊)

  4. State Key Laboratory for Mesoscopic Physics, School of Physics, Peking University, Beijing, 100871, China

    Can Liu  (刘灿) & Kaihui Liu  (刘开辉)

  5. State Key Laboratory of Information Photonics and Optical Communications, School of Science, Beijing University of Posts and Telecommunications, Beijing, 100876, China

    Ming Lei  (雷鸣)

  6. Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, School of Physics and Engineering, Zhengzhou University, Zhengzhou, 450001, China

    Chongxin Shan  (单崇新)

  7. Institute of Semiconductors, South China Normal University, Guangzhou, 510631, China

    Jingbo Li  (李京波)

Authors
  1. Xiaoting Wang  (王晓亭)
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  2. Fang Zhong  (仲方)
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  3. Jun Kang  (康俊)
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  4. Can Liu  (刘灿)
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  5. Ming Lei  (雷鸣)
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  6. Longfei Pan  (潘龙飞)
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  7. Hailu Wang  (王海露)
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  8. Fang Wang  (王芳)
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  9. Ziqi Zhou  (周子琦)
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  10. Yu Cui  (崔宇)
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  11. Kaihui Liu  (刘开辉)
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  12. Jianlu Wang  (王建禄)
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  13. Guozhen Shen  (沈国震)
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  14. Chongxin Shan  (单崇新)
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  15. Jingbo Li  (李京波)
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  16. Weida Hu  (胡伟达)
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  17. Zhongming Wei  (魏钟鸣)
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Contributions

Wei Z and Hu W supervised this project and designed the experiments; Wang X and Zhong F performed sample fabrication and optical measurements; Kang J and Pan L carried out the theoretical part; Wang X, Liu C, Lei M, Wang F, Zhou Z, Cui Y, Liu K, Wang J, Shen G, Shan C and Li J performed the data analysis and interpretation; Wei Z and Wang X wrote the paper, with input from all authors. All authors contributed to the general discussion.

Corresponding authors

Correspondence to Weida Hu  (胡伟达) or Zhongming Wei  (魏钟鸣).

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Conflict of interest

The authors declare that they have no conflict of interest.

Supplementary information

Experimental details and supporting data are available in the online version of the paper.

These two authors contributed equally to this work.

Xiaoting Wang received her PhD degree in 2018 from the Institute of Semiconductors, Chinese Academy of Sciences. Then she joined Beijing University of Posts and Telecommunications and has been working as a postdoctoral fellow. Her research group focuses on the syntheses of 2D layered materials and their related electronic and photoelectric properties.

Zhongming Wei received his PhD degree in 2010 from the Institute of Chemistry, Chinese Academy of Sciences under the supervision of Prof. Daoben Zhu and Prof. Wei Xu. From 2010 to 2015, he worked as a postdoctoral fellow and then as assistant professor in Prof. Thomas Bjørnholm's group at the University of Copenhagen, Denmark. Currently, he is working as a professor at the Institute of Semiconductors, Chinese Academy of Sciences. His research interests include low-dimensional nanostructured materials and their (opto)electronic devices.

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Wang, X., Zhong, F., Kang, J. et al. Polarizer-free polarimetric image sensor through anisotropic two-dimensional GeSe. Sci. China Mater. 64, 1230–1237 (2021). https://doi.org/10.1007/s40843-020-1535-9

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