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Organic Memristor Based on High Planar Cyanostilbene/Polymer Composite Films

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Abstract

Organic memristors with low power consumption, fast write/erasure speed, and complementary metal-oxide-semiconductor(CMOS) compatibility have attracted tremendous attention to mimic biological synapses to realize neuromorphic computation in recent years. In this paper, organic resistive switching memory(ORSM) based on (Z)-3-(naphthalen-2-yl)-2-(4-nitrophenyl)acrylonitrile(NNA) and polymer poly(N-vinylcarbazole)(PVK) composite film was prepared by spin-coating method. Device performance based on NNA:PVK composite films with different mass fractions of NNA were systematically investigated. The ORSM based on PVK:40%(mass fraction) NNA composite film exhibited non-volatile and bipolar memory properties with a switching ratio(Ion/Ioff) of 24.1, endurance of 68 times and retention time of 104 s, a “SET” voltage(Vset) of −0.55 V and a “RESET” voltage(Vreset) of 2.35 V. The resistive switching was ascribed to the filling and vacant process of the charge traps induced by NNA and the inherent traps in PVK bulk. The holes trapping and de-trapping process occurred when the device was applied with a negative or positive bias, which caused the transforming of the conductive way of charges, that is the resistive behaviors in the macroscopic. This study provides a promising platform for the fabrication of ORSM with high performance.

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Acknowledgements

This work was supported by the Ji Hua Laboratory Science Program, China(No. X190251UZ190), the Foundation of Shanxi Datong University Doctoral Research, the Graduate Education Innovation Project of Shanxi Province, China (No.2022Y761), and the Graduate Education Innovation Project of Shanxi Datong University, China(Nos.22CX02, 22CX16).

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Author notes

  1. These authors contributed equally to this work.

Authors and Affiliations

  1. Department of Physics, Shanxi Datong University, Datong, 037009, P. R. China

    Jinjin Zhao, Dandan Men & Zhixiang Gao

  2. Key Laboratory of Bio-inspired Materials and Interfacial Science, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, P. R. China

    Yuchen Wu

  3. Ji Hua Laboratory, Foshan, 528000, P. R. China

    Xiao Wei, Hanfei Gao & Yuchen Wu

  4. Shanxi Province Key Laboratory of Microstructure Electromagnetic Functional Materials, Institute of Solid State Physics, Shanxi Datong University, Datong, 037009, P. R. China

    Jinjin Zhao, Wei Li, Xuechen Wang, Huiwen Zhu, Dandan Men, Zhixiang Gao & Bin Wei

  5. School of Chemistry and Chemical Engineering, Shanxi Datong University, Datong, 037009, P. R. China

    Wei Li, Xuechen Wang, Huiwen Zhu & Wenshan Qu

  6. Key Laboratory of Advanced Display and System Applications, Ministry of Education, School of Mechatronic Engineering and Automation, Shanghai University, Shanghai, 200072, P. R. China

    Bin Wei

Authors
  1. Jinjin Zhao
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  2. Wei Li
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  3. Xuechen Wang
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  4. Xiao Wei
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  5. Huiwen Zhu
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  7. Dandan Men
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  8. Zhixiang Gao
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  9. Bin Wei
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  10. Hanfei Gao
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  11. Yuchen Wu
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Corresponding authors

Correspondence to Xiao Wei, Hanfei Gao or Yuchen Wu.

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40242_2023_2352_MOESM1_ESM.pdf

Special Issue of Bio-inspired Material Chemistry: Study on the Memristor Properties of High Planar Cyanostyylene/Polymer Composite Films

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Zhao, J., Li, W., Wang, X. et al. Organic Memristor Based on High Planar Cyanostilbene/Polymer Composite Films. Chem. Res. Chin. Univ. 39, 121–126 (2023). https://doi.org/10.1007/s40242-023-2352-6

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  • DOI: https://doi.org/10.1007/s40242-023-2352-6

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