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The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography

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Abstract

Diamond is a promising material for next-generation power electronic devices used in high voltage and high temperature, but intrinsic defects introduced during the growth cause the degradation of electrical properties. There is a need to improve the crystal defect analysis method of analyzing large areas as non-destructive. Herein, the inclination of threading dislocations in an on-axis single-crystal free-standing diamond grown by microwave plasma-enhanced chemical vapor deposition (MPCVD) was analyzed using synchrotron white beam X-ray topography (SWBXRT). The majority of dislocations in CVD-grown diamond were known as [001] threading dislocation; however, SWBXRT indicated that the dislocations were not exact [001], but inclined from [001] direction. Dislocation inclination vector was calculated by g = <444> diffraction images, which determined direction and angle from [001] direction. The exact [001] dislocation accounted for 20% of investigated dislocations, and the remaining dislocations inclined randomly from the [001] direction with 7°–12°. The threading dislocations in the off-axis sample inclined in a particular direction due to step-flow dominant growth. The sample analyzed in this paper has no dependence on a particular direction due to localized step-flow caused by on-axis growth. Threading dislocations in an on-axis diamond inclined with a similar degree of well-controlled off-axis sample.

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References

  1. H. Umezawa, M. Nagase, Y. Kato, S. Shikata, Diam. Relat. Mater. 24, 201 (2012)

    Article  ADS  Google Scholar 

  2. C.J.H. Wort, R.S. Balmer, Mater. Today 11, 1 (2008)

    Article  Google Scholar 

  3. A. Jeon, W.S. Choi, J.H. Lee, B. Hong, J. Korean Phys. Soc. 63(5), 1051 (2013)

    Article  ADS  Google Scholar 

  4. A. Gicquel, K. Hassouni, F. Silva, J. Achard, Curr. Appl. Phys. 1(6), 479 (2001)

    Article  Google Scholar 

  5. M.P. Gaukroger, P.M. Martineau, M.J. Crowder, I. Friel, S.D. Williams, D.J. Twitchen, Diam. Relat. Mater. 17, 262 (2008)

    Article  ADS  Google Scholar 

  6. A. Tallaire, T. Ouisse, A. Lantreibecq, R. Cours, M. Legros, H. Bensalah, J. Barjon, V. Mille, O. Brinza, J. Achard, Cryst. Growth Des. 16, 2741 (2016)

    Article  Google Scholar 

  7. N. Fujita, A.T. Blumenau, R. Jones, S. Oberg, P.R. Briddon, Phys. Status Solidi a 12, 3070 (2006)

    Article  ADS  Google Scholar 

  8. K. Ichikawa, H. Kodama, K. Suzuki, A. Sawabe, Thin Solid Films 600, 142 (2016)

    Article  ADS  Google Scholar 

  9. P.M. Martineau, S.C. Lawson, A.J. Taylor, Gems Gemol. 40(2), 2 (2004)

    Article  Google Scholar 

  10. S. Turner, H. Idrissi, A.F. Sartori, S. Korneychuck, Y.-G. Lu, J. Verbeeck, M. Schreck, G.V. Tendeloo, Nonoscale 8, 2212 (2016)

    Article  ADS  Google Scholar 

  11. N. Akashi, N. Fujimaki, S. Shikata, Diam. Relat. Mater. 109, 108024 (2020)

    Article  ADS  Google Scholar 

  12. N. Akashi, A. Seki, H. Saitoh, F. Kawai, S. Shikata, Mater. Sci. Forum 924, 212 (2018)

    Article  Google Scholar 

  13. O. Klein, M. Mayr, M. Fischer, S. Gsell, M. Schreck, Diam. Relat. Mater. 65, 53 (2016)

    Article  ADS  Google Scholar 

  14. P. Martineau, M. Gaukroger, R. Khan, D. Evans, Phys. Status Solidi C 6(8), 1953 (2009)

    Article  ADS  Google Scholar 

  15. N. Tsubouchi, Y. Mokuno, J. Cryst. Growth 455, 71 (2016)

    Article  ADS  Google Scholar 

  16. S. Ha, P. Mieszkowski, M. Skowronski, L.B. Rowland, J. Cryst. Growth 244, 257 (2002)

    Article  ADS  Google Scholar 

  17. S. Chung, V. Wheeler, R. Myers-Ward, C.R. Eddy, D.K. Gaskill, P. Wu, Y.N. Picard, M. Skowronski, J. Appl. Phys. 109, 094906 (2011)

    Article  ADS  Google Scholar 

  18. M. Nagano, I. Kamata, H. Tsuchida, Jpn. J. Appl. Phys. 52, 04CP09 (2013)

    Article  Google Scholar 

  19. M. Nagano, I. Kamata, H. Tsuchida, Mater. Sci. Forum 778–780, 313 (2014)

    Article  Google Scholar 

  20. H. Saka, H. Watanabe, Y. Kitou, H. Kondo, F. Hirose, S. Onda, Jpn. J. Appl. Phys. 53, 111302 (2014)

    Article  ADS  Google Scholar 

  21. T. Shimura, D. Shimokawa, T. Matsumiya, N. Morimoto, A. Ogura, S. Iida, T. Hosoi, H. Watanabe, Curr. Appl. Phys. 12(3), S69 (2012)

    Article  ADS  Google Scholar 

  22. H.G. Yoon, Y.H. Park, New Phys. Sae Mulli 27, 436 (2003)

    Google Scholar 

  23. S. Shikata, N. Akashi, Mater. Sci. Forum 1004, 519 (2020)

    Article  Google Scholar 

  24. S. Shikata, K. Miyajima, N. Akashi, Diam. Relat. Mater. 118, 108502 (2021)

    Article  ADS  Google Scholar 

  25. Y. Yao, Y. Ishikawa, Y. Sugawara, J. Cryst. Growth 548, 125825 (2020)

    Article  Google Scholar 

  26. The element six CVD diamond handbook. http://www.e6.com

  27. J. Hornstra, J. Phys. Chem. Solids 5, 129 (1958)

    Article  ADS  Google Scholar 

  28. I. L. Shul’pina and T. S. Argunova, J. Phys. D Appl. Phys. 28, A47 (1995). https://doi.org/10.1088/0022-3727/28/4A/009

    Article  ADS  Google Scholar 

  29. K. Ishiji, S. Kawado, Y. Hirai, S. Nagamachi, Jpn. J. Appl. Phys. 56, 106601 (2017)

    Article  ADS  Google Scholar 

  30. S. Shikata, Y. Matsuyama, T. Teraji, Jpn. J. Appl. Phys. 58, 045503 (2019)

    Article  ADS  Google Scholar 

  31. NIST Standard Reference Database 126. https://www.nist.gov/pml/x-ray-mass-attenuation-coefficients

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Acknowledgements

This work was supported by the Korea Electrotechnology Research Institute (KERI) Primary Research Program through the National Research Council of Science & Technology (NST) funded by the Ministry of Science and ICT (MSIT) (No. 21A01063).

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Authors and Affiliations

  1. Power Apparatus Research Division, Korea Electrotechnology Research Institute, Changwon, 51543, South Korea

    Hyemin Jang, Moonkyong Na & Wook Bahng

  2. Department of Materials Science and Engineering, Pusan National University, Busan, 46241, South Korea

    Hyemin Jang & Jung Woo Lee

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  1. Hyemin Jang
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  2. Moonkyong Na
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  4. Jung Woo Lee
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Correspondence to Moonkyong Na or Jung Woo Lee.

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Jang, H., Na, M., Bahng, W. et al. The inclination of threading dislocation in chemical vapor deposition-grown single-crystal diamond analyzed by synchrotron white beam X-ray topography. J. Korean Phys. Soc. 80, 175–184 (2022). https://doi.org/10.1007/s40042-021-00380-z

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  • DOI: https://doi.org/10.1007/s40042-021-00380-z

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