Abstract
In this study, gadolinium oxide nanorods (Gd2O3 NRs) were deposited using the glancing angle deposition (GLAD) technique on n-type Si (100) substrate. The annealing effect on the electrical and structural properties of the as-deposited samples was evaluated at 500 °C. The improved crystal structure was seen in the annealed sample. The average crystallite size of the annealed samples (21.85 nm) was found to be higher than that of the as-deposited samples (18.08 nm). Enhancement in the responsivity with a turn-on voltage of + 0.47 V was estimated for the annealed devices. Moreover, the improved internal gain of 53.13, detectivity of 9.47 × 1013 Jones, and noise equivalent power of 5.92 × 10–14 W were obtained after annealing. A rise time of 34 ms and a fall time of 53 ms were also obtained for the annealed device. The overall improvement in the device performance of Gd2O3 NRs after annealing could be a viable candidate for photodetector applications.
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Acknowledgements
The authors would like to thank SAIF NEHU for TEM characterization, Centre of Excellence in Advanced Materials, NIT Durgapur for FESEM, NIT Nagaland for XRD measurement and financial support.
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Meitei, P.N., Alam, M.W., Ngangbam, C. et al. Enhanced UV photodetection characteristics of annealed Gd2O3 nanorods. Appl Nanosci 11, 1437–1445 (2021). https://doi.org/10.1007/s13204-021-01787-7
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DOI: https://doi.org/10.1007/s13204-021-01787-7