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A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors

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Abstract

The third-generation (200 GHz) silicon–germanium heterojunction bipolar transistors were irradiated with 100 MeV oxygen [O7+] ions in the dose range from 1 to 100 Mrad. The different electrical characteristics like forward-mode and inverse-mode Gummel characteristics, the normalized base current, excess base current, the current gain, damage constant, neutral base recombination, avalanche multiplication and the output characteristics were measured before and after irradiation. The ion irradiation results were compared with 60Co gamma irradiation results to understand the linear energy transfer effects on the electrical characteristics on silicon–germanium heterojunction bipolar transistors. The stopping range of ions in matter simulation study was conducted to understand the energy loss of 100 MeV O7+ ions in silicon–germanium heterojunction bipolar transistor structure.

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Acknowledgments

The authors would like to thank Dr. D. Kanjilal, Dr. D. K. Avasthi, Dr. A. Tripathi and Dr. K. Asokan, IUAC, New Delhi for providing the experimental facilities. The financial support by Department of Science and Technology (DST), Government of India (Project No. SR/S2/CMP-0034/2012) is thankfully acknowledged.

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Authors and Affiliations

  1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, 570006, India

    N H Vinayakprasanna, K C Praveen & A P Gnana Prakash

  2. Department of PG Studies in Physics, JSS College, Ooty Road, Mysore, 570025, India

    N Pushpa

  3. School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, 30332, USA

    J D Cressler

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  1. N H Vinayakprasanna
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  2. K C Praveen
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  3. N Pushpa
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  4. J D Cressler
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  5. A P Gnana Prakash
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Correspondence to A P Gnana Prakash.

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Vinayakprasanna, N.H., Praveen, K.C., Pushpa, N. et al. A comparison of 100 MeV oxygen ion and 60Co gamma irradiation effects on advanced 200 GHz SiGe heterojunction bipolar transistors. Indian J Phys 89, 789–796 (2015). https://doi.org/10.1007/s12648-015-0654-3

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  • DOI: https://doi.org/10.1007/s12648-015-0654-3

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