Abstract
Zn doped SnS2 thin films have been deposited by spray pyrolysis technique. For doping level ranging from 0 to 10 at%. X-ray diffraction patterns of films with different Zn content show that all samples have nearly single crystalline structure with dominant berndtite phase andpreferred orientation of (001) plane. Optical transparency of films in visible region decreases from 60 to 10 %, when doping level is increased. Optical band gap of the films, lies in region of 2.3–2.7 eV for different dopant concentration. Refractive Index for pure SnS2 samples is about 1.6 and it increases to 2.05 after addition of Zn. Extinction coefficient (k) is about 0.2 for pure SnS2, that for the doping samples it increases up 0.6. Photoconductivity of Zn doped SnS2 thin films have been measured under visible light.
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig1_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig2_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig3_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig4_HTML.jpg)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig5_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig6_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig7_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig8_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig9_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig10_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig11_HTML.gif)
![](http://media.springernature.com/m312/springer-static/image/art%3A10.1007%2Fs12648-014-0451-4/MediaObjects/12648_2014_451_Fig12_HTML.gif)
Similar content being viewed by others
References
H Dittrich et al 13th Int. conf. Proc on Solar Energy p 1299 (1995)
N Koteeswara Reddy and K Ramakrishna Reddy Mater. Res. Bull. 41 414 (2006)
N Reddy and K Reddy Thin Solid Films 325 4 (1998)
B Thangaraju and P Kaliannan Phys. Appl. Phys. 33 1054 (2000)
T Jiang, G Ozine, A Verma and R Bedard Mater. Chem. 8 1649 (1998)
S Panda, A Antonakos, E Liarokapis, S Bhattacharya and S Chaudhuri Mater. Res. Bull. 42 576 (2007)
G Yan Hui, G Yu Ying, S Wei Min Q Yong Hua and W Guang Pu Shanghai University 11 403 (2007)
L Price, I Parkin, A Hardy and R Clark Chem. Mater. 11 1792 (1999)
B Sankapal, R Mane and C Lokhande Mater. Res. Bull. 35 2027 (2000)
R Engelken, H Claud, C Lee, M Slayton and H Ghoreishi Electrochemistry 134 2696 (1987)
C D Lokhande Phys. Appl. Phys. 23 1703 (1990)
K Kawano, R Nakata and M Sumita Appl. Phys. 22 136 (1989); N F Habubi, K A Mishjil and S S Chiad Indian J. Phys. 87 235 (2013)
J George and K Joseph Phys. D Appl. Phys. 15 1109 (1982); M Mahdizadeh-Rokhi Indian J. Phys. 87 517 (2013)
K Matsumoto and K Takagi Cryst Growth 63 202 (1983)
S Ray, M Karanjai and D Das Gupta Thin Solid Films 350 72 (1999)
M Mohagheghi, N Shahtahmasebi, M Alinejad, A Youssefi and M Saremi Solid State Sci. 11 233 (2009)
H Hartnagel, A Dawar, A Jain and C Jagadish Semiconducting transparent thin films (Philadelphia: Institute of physics publishing) p 358 (1995)
M Nadeem and W Ahmed Turk. J. Phys. 24 651 (2000)
R Domingo, R Itoga and C Kannewurf Phys. Rev. 14 3536 (1966)
N Reddy and K Reddy Mater. Chem. Phys. 102 13 (2007)
C Julien, M Eddrief, I Samaras and M Balkanski Mater. Sci. Eng. 15 70 (1992)
C Cifuentes, M Botero, E Romero, C Calderon and G Gordillo Brazilian J. Phys. 36 1046 (2006)
W Daranfed, M Aida, A Hafdallah and H Lekiket Thin Solid Films 518 1082 (2009)
J Manifacier, M Murcia and J Fillard Thin Solid Films 41 127 (1977)
B Subramanian, C Sanjeeviraja and M Jayachandra Mater. Chem. Phys. 71 40 (2001)
N Koteeswara Reddy and K Ramakrishna Reddy Mater. Res. Bull. 41 414 (2006)
T Anita, R Warrier, C Kartha and K Vijayakumar Thin Solid Films 518 4370 (2010)
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Etefagh, R., Shahtahmassebi, N., Benam, MR. et al. Effect of Zn-doping on absorption coefficient and photo-conductivity of SnS2 thin films deposited by spray pyrolysis technique. Indian J Phys 88, 563–570 (2014). https://doi.org/10.1007/s12648-014-0451-4
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s12648-014-0451-4