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Lifetimes of excited levels for atomic silicon

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Abstract

The lifetimes of some excited levels for atomic silicon are calculated using the weakest bound electron potential model theory (WBEPMT) and the quantum defect orbital theory. In the WBEPMT framework, we have employed both numerical Coulomb Approximation wave functions and numerical non-relativistic Hartree–Fock wave functions for expectation values of radii. The obtained lifetime results have been compared with theoretical and experimental data in the literature.

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Acknowledgments

The authors gratefully acknowledge Perihan Uğurtan for her help and the Selçuk University Scientific Research Projects (BAP) Coordinating Office for support.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Selçuk University, Campus, 42049, Konya, Turkey

    Şule Ateş & Hatice Hüda Uğurtan

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  1. Şule Ateş
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  2. Hatice Hüda Uğurtan
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Correspondence to Şule Ateş.

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Ateş, Ş., Uğurtan, H.H. Lifetimes of excited levels for atomic silicon. Indian J Phys 87, 9–17 (2013). https://doi.org/10.1007/s12648-012-0167-2

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