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Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependent I–V and C–V measurements

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Abstract

In this work, Schottky diodes are fabricated on n-InP using Ru/Cu metallization scheme and studied the electrical properties in the temperature range of 260–420 K in steps of 20 K. The I–V–T characteristics of Ru/Cu Schottky contacts are analyzed in terms of thermionic emission theory by incorporating the concept of barrier inhomogenities through a Gaussian distribution function. The estimated barrier heights (BHs) of the Ru/Cu/n-InP Schottky barrier diodes (SBDs) are varied from 0.45 eV (I–V), 0.84 eV (C–V) at 260 K to 0.63 eV (I–V), 0.64 eV (C–V) at 420 K. The ideality factors n are varied from 2.50 at 260 K to 1.67 at 420 K. The calculated series resistance (R s) of the Ru/Cu/n-InP SBD is in the range of 2,703 Ω at 260 K to 134 Ω at 420 K. From the above observations, Φb0, n and R s are strongly temperature dependent. A laterally homogeneous BH value of approximately 0.77 eV for the linear relationship between experimental effective BHs and ideality factors that can be explained by lateral inhomogenities. Furthermore, the mean BH and the Richardson constant values are obtained to be 0.91 eV and 8.41 A K−2 cm−2, respectively, by means of the modified Richardson plot ln(I 0/T 2) − (q 2σ 20 /2k 2 T 2) vs. 1,000/T. The inconsistency between BHs obtained from I–V and C–V measurements is also interpreted.

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Authors and Affiliations

  1. Department of Physics, Sri Venkateswara University, Tirupati, 517 502, Andhra Pradesh, India

    V. Lakshmi Devi, I. Jyothi & V. Rajagopal Reddy

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  1. V. Lakshmi Devi
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  2. I. Jyothi
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  3. V. Rajagopal Reddy
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Correspondence to V. Rajagopal Reddy.

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Lakshmi Devi, V., Jyothi, I. & Rajagopal Reddy, V. Electrical transport properties of Ru/Cu/n-InP Schottky barrier diode based on temperature-dependent I–V and C–V measurements. Indian J Phys 86, 687–695 (2012). https://doi.org/10.1007/s12648-012-0118-y

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