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Methods to Reduce Ambipolar Current of Various TFET Structures: a Review

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Abstract

As far as miniaturization of devices are being continue in semiconductor market, there are alternative option has been discovered by the researcher. It is well known that Metal Oxide Semiconductor (MOS) devices have vast applications in various emerging fields from medical to defense. However, there are certain drawbacks of MOSFET such as limited value of Sub-threshold swing (SS) and higher power dissipation. To overcome these limitations, Tunnel FET (TFETs) are being considered appropriate device for the replacement of MOSFET. However, TFETs have small ON current, high ambipolar current, and typically slower device compared to the MOSFET. However, TFETs have some distinctive characteristics like subthreshold swing (SS) less than 60 mV/dec., band to band tunneling (BTBT) mechanism make it more immune to schottky defects and operate at minimum value of threshold voltage. Due to these unique properties, it is realized to replace the MOSFET with TFET. In this review paper, we have made a comparative analysis of electrical parameters among various TFET structures. We also discussed various techniques to mitigate the ambipolar current in TFET through various engineering technique like structural engineering, drain engineering, dielectric engineering etc. The impact of interface trap charges on electrical parameters for various device architecture are studied using Gaussian and Uniform doping profile in this paper. A comparative study of electrical parameters among various TFET architectures are reported.

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Acknowledgements

The authors acknowledge the funding by Science & Engineering Research Board, Govt. of India (Sanction Reference. No. SRG/2019/000628).

Funding

This work is funded by Science & Engineering Research Board, Govt. of India (Sanction Reference. No. SRG/2019/000628).

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  1. Department of Electronics and Communication Engineering, Malaviya National Institute of Technology Jaipur, Jaipur, Rajasthan, 302017, India

    Shreyas Tiwari & Rajesh Saha

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  1. Shreyas Tiwari
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  2. Rajesh Saha
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The manuscript is written by Shreyas Tiwari. The grammatical corrections in this paper have done by Rajesh Saha.

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Correspondence to Rajesh Saha.

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Tiwari, S., Saha, R. Methods to Reduce Ambipolar Current of Various TFET Structures: a Review. Silicon 14, 6507–6515 (2022). https://doi.org/10.1007/s12633-021-01458-w

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